N-Channel MOSFET, 7 A, 700 V, 3+Tab-Pin IPAK Diodes Inc DMJ70H900HJ3

RS Stock No.: 133-3380Brand: DiodesZetexManufacturers Part No.: DMJ70H900HJ3
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

700 V

Package Type

TO-251

Mounting Type

Through Hole

Pin Count

3+Tab

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

2.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.8mm

Typical Gate Charge @ Vgs

18.4 nC @ 10 V

Height

7.17mm

Series

DMJ70H900HJ3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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P.O.A.

N-Channel MOSFET, 7 A, 700 V, 3+Tab-Pin IPAK Diodes Inc DMJ70H900HJ3

P.O.A.

N-Channel MOSFET, 7 A, 700 V, 3+Tab-Pin IPAK Diodes Inc DMJ70H900HJ3
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

700 V

Package Type

TO-251

Mounting Type

Through Hole

Pin Count

3+Tab

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

2.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.8mm

Typical Gate Charge @ Vgs

18.4 nC @ 10 V

Height

7.17mm

Series

DMJ70H900HJ3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.