N-Channel MOSFET, 14.2 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2011UFDF-7

RS Stock No.: 133-3344Brand: DiodesZetexManufacturers Part No.: DMN2011UFDF-7
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

20 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

56 nC @ 10 V

Length

2.05mm

Series

DMN2011UFDF

Minimum Operating Temperature

-55 °C

Height

0.58mm

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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N-Channel MOSFET, 14.2 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2011UFDF-7
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P.O.A.

N-Channel MOSFET, 14.2 A, 20 V, 6-Pin U-DFN2020 Diodes Inc DMN2011UFDF-7
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

20 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

56 nC @ 10 V

Length

2.05mm

Series

DMN2011UFDF

Minimum Operating Temperature

-55 °C

Height

0.58mm

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.