Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
20 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
56 nC @ 10 V
Length
2.05mm
Series
DMN2011UFDF
Minimum Operating Temperature
-55 °C
Height
0.58mm
Forward Diode Voltage
1.2V
Product details
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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Please check again later.
P.O.A.
20
P.O.A.
20
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Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
20 V
Package Type
U-DFN2020
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
56 nC @ 10 V
Length
2.05mm
Series
DMN2011UFDF
Minimum Operating Temperature
-55 °C
Height
0.58mm
Forward Diode Voltage
1.2V
Product details