Dual N-Channel MOSFET, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMN3016LDV-7

RS Stock No.: 133-3342Brand: DiodesZetexManufacturers Part No.: DMN3016LDV-7
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

30 V

Package Type

PDI3333

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.15mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.15mm

Typical Gate Charge @ Vgs

21 nC @ 15 V

Height

0.8mm

Series

DMN3016LDV

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Dual N-Channel MOSFET, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMN3016LDV-7
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P.O.A.

Dual N-Channel MOSFET, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMN3016LDV-7
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

30 V

Package Type

PDI3333

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.15mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.15mm

Typical Gate Charge @ Vgs

21 nC @ 15 V

Height

0.8mm

Series

DMN3016LDV

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.