Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
150 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
310 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.4mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Product details
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
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P.O.A.
50
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
150 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
310 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.4mm
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Product details
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.