N-Channel MOSFET Transistor, 34 A, 200 V, 3-Pin D2PAK Infineon IPB320N20N3GATMA1

RS Stock No.: 911-4868Brand: InfineonManufacturers Part No.: IPB320N20N3GATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

4.57mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Country of Origin

Germany

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET Transistor, 34 A, 200 V, 3-Pin D2PAK Infineon IPB320N20N3GATMA1

P.O.A.

N-Channel MOSFET Transistor, 34 A, 200 V, 3-Pin D2PAK Infineon IPB320N20N3GATMA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Height

4.57mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Country of Origin

Germany

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.