N-Channel MOSFET, 37 A, 1000 V, 4-Pin SOT-227B IXYS IXFN44N100P

RS Stock No.: 125-8044Brand: IXYSManufacturers Part No.: IXFN44N100P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

1000 V

Package Type

SOT-227B

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

220 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

890 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

305 nC @ 10 V

Height

9.6mm

Series

Polar HiPerFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Philippines

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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P.O.A.

N-Channel MOSFET, 37 A, 1000 V, 4-Pin SOT-227B IXYS IXFN44N100P

P.O.A.

N-Channel MOSFET, 37 A, 1000 V, 4-Pin SOT-227B IXYS IXFN44N100P
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

37 A

Maximum Drain Source Voltage

1000 V

Package Type

SOT-227B

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

220 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

890 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

305 nC @ 10 V

Height

9.6mm

Series

Polar HiPerFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Philippines

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more