Microchip 16Mbit Quad-SPI Flash Memory 8-Pin WDFN, SST26VF016B-104I/MF

RS Stock No.: 146-0297Brand: MicrochipManufacturers Part No.: SST26VF016B-104I/MF
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Technical Document

Specifications

Memory Size

16Mbit

Interface Type

Quad-SPI

Package Type

WDFN

Pin Count

8

Organisation

2M x 8 bit

Mounting Type

Surface Mount

Cell Type

Split Gate

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

6mm

Height

0.8mm

Width

5mm

Dimensions

6 x 5 x 0.8mm

Series

SST26

Number of Words

2MB

Number of Bits per Word

8bit

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Automotive Standard

AEC-Q100

Maximum Random Access Time

8ns

Country of Origin

Thailand

Product details

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory

The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip’s SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms.

Features

Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure
x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
High Speed Clock Frequency- 104 MHz Max
Burst Modes
Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)
Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical)
Flexible Erase Capability
Software Write Protection

Flash Memory, Microchip

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P.O.A.

Microchip 16Mbit Quad-SPI Flash Memory 8-Pin WDFN, SST26VF016B-104I/MF

P.O.A.

Microchip 16Mbit Quad-SPI Flash Memory 8-Pin WDFN, SST26VF016B-104I/MF
Stock information temporarily unavailable.

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Technical Document

Specifications

Memory Size

16Mbit

Interface Type

Quad-SPI

Package Type

WDFN

Pin Count

8

Organisation

2M x 8 bit

Mounting Type

Surface Mount

Cell Type

Split Gate

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

6mm

Height

0.8mm

Width

5mm

Dimensions

6 x 5 x 0.8mm

Series

SST26

Number of Words

2MB

Number of Bits per Word

8bit

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Automotive Standard

AEC-Q100

Maximum Random Access Time

8ns

Country of Origin

Thailand

Product details

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory

The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip’s SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms.

Features

Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure
x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
High Speed Clock Frequency- 104 MHz Max
Burst Modes
Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)
Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical)
Flexible Erase Capability
Software Write Protection

Flash Memory, Microchip