Dual N-Channel MOSFET, 260 mA, 60 V, 8-Pin DFN1010B-6 Nexperia NX7002BKXBZ

RS Stock No.: 153-0730Brand: NexperiaManufacturers Part No.: NX7002BKXBZ
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Package Type

DFN1010B-6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

4032 mW

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.05mm

Number of Elements per Chip

2

Height

0.36mm

Minimum Operating Temperature

-55 °C

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P.O.A.

Dual N-Channel MOSFET, 260 mA, 60 V, 8-Pin DFN1010B-6 Nexperia NX7002BKXBZ

P.O.A.

Dual N-Channel MOSFET, 260 mA, 60 V, 8-Pin DFN1010B-6 Nexperia NX7002BKXBZ
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Package Type

DFN1010B-6

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

4032 mW

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

1 nC @ 10 V

Width

1.05mm

Number of Elements per Chip

2

Height

0.36mm

Minimum Operating Temperature

-55 °C