Hex P-Channel MOSFET, -410 mA, -30 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMDXB1200UPEZ

RS Stock No.: 153-0747Brand: NexperiaManufacturers Part No.: PMDXB1200UPEZ
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

-410 mA

Maximum Drain Source Voltage

-30 V

Package Type

DFN1010B-6, SOT1216

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.95V

Minimum Gate Threshold Voltage

-0.45V

Maximum Power Dissipation

4030 mW

Maximum Gate Source Voltage

8 V

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Width

1.05mm

Number of Elements per Chip

6

Minimum Operating Temperature

-55 °C

Height

0.36mm

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P.O.A.

Hex P-Channel MOSFET, -410 mA, -30 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMDXB1200UPEZ

P.O.A.

Hex P-Channel MOSFET, -410 mA, -30 V, 8-Pin DFN1010B-6, SOT1216 Nexperia PMDXB1200UPEZ
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

-410 mA

Maximum Drain Source Voltage

-30 V

Package Type

DFN1010B-6, SOT1216

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.95V

Minimum Gate Threshold Voltage

-0.45V

Maximum Power Dissipation

4030 mW

Maximum Gate Source Voltage

8 V

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Width

1.05mm

Number of Elements per Chip

6

Minimum Operating Temperature

-55 °C

Height

0.36mm