onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4.5 V dc
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
10.28mm
Height
15.75mm
Width
4.82mm
Dimensions
10.28 x 4.82 x 15.75mm
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
10
P.O.A.
10
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Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4.5 V dc
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
10.28mm
Height
15.75mm
Width
4.82mm
Dimensions
10.28 x 4.82 x 15.75mm
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products