Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
265 mW
Minimum DC Current Gain
220
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1.25 x 0.85 x 0.55mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose PNP Transistors, Up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
8000
P.O.A.
8000
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Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
SOT-723
Mounting Type
Surface Mount
Maximum Power Dissipation
265 mW
Minimum DC Current Gain
220
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1.25 x 0.85 x 0.55mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose PNP Transistors, Up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.