Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
50 V
Package Type
CPH
Mounting Type
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
420 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
3000
P.O.A.
3000
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
50 V
Package Type
CPH
Mounting Type
Surface Mount
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
420 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.