P-Channel MOSFET, 7.5 A, 30 V, 8-Pin ECH onsemi ECH8315-TL-H

RS Stock No.: 145-3580Brand: onsemiManufacturers Part No.: ECH8315-TL-H
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

0.9mm

Country of Origin

China

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

P-Channel MOSFET, 7.5 A, 30 V, 8-Pin ECH onsemi ECH8315-TL-H

P.O.A.

P-Channel MOSFET, 7.5 A, 30 V, 8-Pin ECH onsemi ECH8315-TL-H
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Package Type

ECH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

0.9mm

Country of Origin

China

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more