Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W

RS Stock No.: 145-5295Brand: onsemiManufacturers Part No.: ECH8659-TL-W
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Package Type

ECH8, SOT-28FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

11.8 nC @ 10 V

Width

2.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

0.88mm

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W

P.O.A.

Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Package Type

ECH8, SOT-28FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

11.8 nC @ 10 V

Width

2.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

0.88mm

Forward Diode Voltage

1.2V

Country of Origin

China

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor