onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

RS Stock No.: 163-0033Brand: onsemiManufacturers Part No.: MJ11012G
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Technical Document

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

60 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-204AA

Mounting Type

Through Hole

Pin Count

2

Transistor Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

200

Maximum Base Emitter Saturation Voltage

5 V

Maximum Collector Base Voltage

60 V

Maximum Collector Emitter Saturation Voltage

4 V

Height

8.51mm

Maximum Power Dissipation

200 W

Minimum Operating Temperature

-55 °C

Dimensions

21.08 (Dia.) x 8.51mm

Maximum Operating Temperature

+200 °C

Product details

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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P.O.A.

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

P.O.A.

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

60 V

Maximum Emitter Base Voltage

5 V

Package Type

TO-204AA

Mounting Type

Through Hole

Pin Count

2

Transistor Configuration

Single

Number of Elements per Chip

2

Minimum DC Current Gain

200

Maximum Base Emitter Saturation Voltage

5 V

Maximum Collector Base Voltage

60 V

Maximum Collector Emitter Saturation Voltage

4 V

Height

8.51mm

Maximum Power Dissipation

200 W

Minimum Operating Temperature

-55 °C

Dimensions

21.08 (Dia.) x 8.51mm

Maximum Operating Temperature

+200 °C

Product details

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.