Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
250 W
Minimum DC Current Gain
14
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V dc
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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P.O.A.
30
P.O.A.
30
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
250 W
Minimum DC Current Gain
14
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V dc
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China