Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 1.4 x 1.01mm
Country of Origin
China
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
100
P.O.A.
100
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 1.4 x 1.01mm
Country of Origin
China
Product details
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.