Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Length
3.04mm
Country of Origin
China
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
3000
P.O.A.
3000
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
300 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
5000
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Maximum Collector Cut-off Current
100nA
Height
1.01mm
Width
1.4mm
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
-55 °C
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Length
3.04mm
Country of Origin
China
Product details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.