onsemi NGTB30N135IHRWG IGBT, 60 A 1350 V, 3-Pin TO-247, Through Hole

RS Stock No.: 145-3409Brand: ON SemiconductorManufacturers Part No.: NGTB30N135IHRWG
brand-logo
View all in IGBTs

Technical Document

Specifications

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1350 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

394 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

onsemi NGTB30N135IHRWG IGBT, 60 A 1350 V, 3-Pin TO-247, Through Hole

P.O.A.

onsemi NGTB30N135IHRWG IGBT, 60 A 1350 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1350 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

394 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.