onsemi NGTG12N60TF1G IGBT, 88 (Pulse) A 600 V, 3-Pin TO-3PF, Through Hole

RS Stock No.: 801-6801PBrand: ON SemiconductorManufacturers Part No.: NGTG12N60TF1G
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Technical Document

Specifications

Maximum Continuous Collector Current

88 (Pulse) A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

54 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

onsemi NGTG12N60TF1G IGBT, 88 (Pulse) A 600 V, 3-Pin TO-3PF, Through Hole
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P.O.A.

onsemi NGTG12N60TF1G IGBT, 88 (Pulse) A 600 V, 3-Pin TO-3PF, Through Hole
Stock information temporarily unavailable.
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Technical Document

Specifications

Maximum Continuous Collector Current

88 (Pulse) A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

54 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.