Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 ON Semiconductor NTJD4152PT1G

RS Stock No.: 163-1117Brand: onsemiManufacturers Part No.: NTJD4152PT1G
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

350 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.35mm

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 ON Semiconductor NTJD4152PT1G

P.O.A.

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 ON Semiconductor NTJD4152PT1G
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

350 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.35mm

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor