Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PG

RS Stock No.: 780-0611Brand: onsemiManufacturers Part No.: NTJD4152PT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

350 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PG
Select packaging type

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PG
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

880 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

350 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more