Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG

RS Stock No.: 124-5405Brand: onsemiManufacturers Part No.: NTLJD4116NT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Maximum Gate Source Voltage

-8 V, +8 V

Width

2mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Height

0.75mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG

P.O.A.

Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Maximum Gate Source Voltage

-8 V, +8 V

Width

2mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Height

0.75mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor