Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
5.1 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
25
P.O.A.
25
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
5.1 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details