Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG

RS Stock No.: 163-1146Brand: ON SemiconductorManufacturers Part No.: NTZD5110NT1G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.6mm

Country of Origin

Malaysia

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG

P.O.A.

Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.6mm

Country of Origin

Malaysia

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor