N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13303W1015
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
1.5mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Height
0.38mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
10
P.O.A.
10
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Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
1.5mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Width
1mm
Transistor Material
Si
Number of Elements per Chip
1
Height
0.38mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products