N-Channel MOSFET, 2.1 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13381F4T

RS Stock No.: 823-9231PBrand: Texas InstrumentsManufacturers Part No.: CSD13381F4T
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

12 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

+8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.04mm

Typical Gate Charge @ Vgs

1.06 nC @ 4.5 V

Width

0.64mm

Transistor Material

Si

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Height

0.35mm

Product details

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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N-Channel MOSFET, 2.1 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13381F4T
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P.O.A.

N-Channel MOSFET, 2.1 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13381F4T
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

12 V

Package Type

PICOSTAR

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

+8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.04mm

Typical Gate Charge @ Vgs

1.06 nC @ 4.5 V

Width

0.64mm

Transistor Material

Si

Series

FemtoFET

Minimum Operating Temperature

-55 °C

Height

0.35mm

Product details

N-Channel FemtoFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments