N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2

RS Stock No.: 827-4672Brand: Texas InstrumentsManufacturers Part No.: CSD16301Q2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

25 V

Package Type

WSON

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.55V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Width

2mm

Number of Elements per Chip

1

Transistor Material

Si

Height

0.8mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2
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P.O.A.

N-Channel MOSFET, 5 A, 25 V, 6-Pin WSON Texas Instruments CSD16301Q2
Stock information temporarily unavailable.
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

25 V

Package Type

WSON

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

34 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.55V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Width

2mm

Number of Elements per Chip

1

Transistor Material

Si

Height

0.8mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments