Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT

RS Stock No.: 133-0159Brand: Texas InstrumentsManufacturers Part No.: CSD87355Q5DT
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

30 V

Package Type

LSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

12 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+125 °C

Length

6.1mm

Typical Gate Charge @ Vgs

18 nC, 40 nC

Width

5.1mm

Number of Elements per Chip

2

Height

1.5mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments

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P.O.A.

Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Select packaging type

P.O.A.

Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

30 V

Package Type

LSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

12 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+125 °C

Length

6.1mm

Typical Gate Charge @ Vgs

18 nC, 40 nC

Width

5.1mm

Number of Elements per Chip

2

Height

1.5mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

Power MOSFET Modules, Texas Instruments

Half-Bridge NexFET Power Block

MOSFET Transistors, Texas Instruments