P-Channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments TPS1101D

RS Stock No.: 662-4273Brand: Texas InstrumentsManufacturers Part No.: TPS1101D
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

15 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

791 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +2 V

Typical Gate Charge @ Vgs

11.25 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+125 °C

Length

4.9mm

Width

3.91mm

Transistor Material

Si

Minimum Operating Temperature

-40 °C

Height

1.58mm

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P.O.A.

P-Channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments TPS1101D

P.O.A.

P-Channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments TPS1101D
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

15 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

791 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +2 V

Typical Gate Charge @ Vgs

11.25 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+125 °C

Length

4.9mm

Width

3.91mm

Transistor Material

Si

Minimum Operating Temperature

-40 °C

Height

1.58mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more