P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z10PBF
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
15.49mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
50
P.O.A.
50
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Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
15.49mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products