Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Width
4.83mm
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
50
P.O.A.
50
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
16 nC @ 10 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.63mm
Width
4.83mm
Number of Elements per Chip
1
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details