N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP Vishay IRFI820GPBF

RS Stock No.: 145-1790Brand: VishayManufacturers Part No.: IRFI820GPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

24 nC @ 10 V

Height

9.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP Vishay IRFI820GPBF

P.O.A.

N-Channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP Vishay IRFI820GPBF
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.1 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

24 nC @ 10 V

Height

9.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor