Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Transistor Material
Si
Width
6.22mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
2.39mm
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Transistor Material
Si
Width
6.22mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
2.39mm
Product details