P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP6 Vishay SI3443DDV-T1-GE3

RS Stock No.: 146-4439Brand: VishayManufacturers Part No.: SI3443DDV-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1.5V

Minimum Gate Threshold Voltage

-0.6V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

1.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1mm

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P.O.A.

P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP6 Vishay SI3443DDV-T1-GE3

P.O.A.

P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP6 Vishay SI3443DDV-T1-GE3
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1.5V

Minimum Gate Threshold Voltage

-0.6V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Width

1.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more