N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3

RS Stock No.: 134-9156Brand: VishayManufacturers Part No.: SI5448DU-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.47 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Length

3mm

Typical Gate Charge @ Vgs

26.2 nC @ 10 V

Width

1.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

0.8mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3

P.O.A.

N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.47 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Length

3mm

Typical Gate Charge @ Vgs

26.2 nC @ 10 V

Width

1.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

0.8mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor