P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3

RS Stock No.: 710-3386Brand: VishayManufacturers Part No.: SI7309DN-T1-E3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.05mm

Width

3.05mm

Minimum Operating Temperature

-65 °C

Height

1.04mm

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
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P.O.A.

P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
Stock information temporarily unavailable.
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.05mm

Width

3.05mm

Minimum Operating Temperature

-65 °C

Height

1.04mm

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor