N-Channel MOSFET, 100 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR680DP-T1-RE3

RS Stock No.: 134-9161Brand: VishayManufacturers Part No.: SIR680DP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

69.5 nC @ 10 V

Width

5.26mm

Number of Elements per Chip

1

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Series

TrenchFET

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 100 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR680DP-T1-RE3

P.O.A.

N-Channel MOSFET, 100 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR680DP-T1-RE3
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

6.25mm

Typical Gate Charge @ Vgs

69.5 nC @ 10 V

Width

5.26mm

Number of Elements per Chip

1

Height

1.12mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Series

TrenchFET

Product details

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor