Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
P.O.A.
3000
P.O.A.
3000
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
24.2 A
Maximum Drain Source Voltage
250 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
25.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details