Technical Document
Specifications
Brand
VishayDirection Type
Uni-Directional
Diode Configuration
Single
Maximum Clamping Voltage
19.9V
Minimum Breakdown Voltage
13.3V
Mounting Type
Surface Mount
Package Type
DO-214AA (SMB)
Maximum Reverse Stand-off Voltage
12V
Pin Count
2
Peak Pulse Power Dissipation
600W
Maximum Peak Pulse Current
30.2A
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Dimensions
4.57 x 3.94 x 2.24mm
Maximum Operating Temperature
+150 °C
Height
2.24mm
Test Current
1mA
Length
4.57mm
Maximum Reverse Leakage Current
5µA
Width
3.94mm
Product details
TRANSZORB® Transient Voltage Suppressors SMT Unidirectional 600W, SMBJ Series, Vishay Semiconductor
Features:
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
Applications:
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
Transient Voltage Suppressors, Vishay Semiconductor
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Technical Document
Specifications
Brand
VishayDirection Type
Uni-Directional
Diode Configuration
Single
Maximum Clamping Voltage
19.9V
Minimum Breakdown Voltage
13.3V
Mounting Type
Surface Mount
Package Type
DO-214AA (SMB)
Maximum Reverse Stand-off Voltage
12V
Pin Count
2
Peak Pulse Power Dissipation
600W
Maximum Peak Pulse Current
30.2A
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Dimensions
4.57 x 3.94 x 2.24mm
Maximum Operating Temperature
+150 °C
Height
2.24mm
Test Current
1mA
Length
4.57mm
Maximum Reverse Leakage Current
5µA
Width
3.94mm
Product details
TRANSZORB® Transient Voltage Suppressors SMT Unidirectional 600W, SMBJ Series, Vishay Semiconductor
Features:
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
Applications:
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.