N-Channel MOSFET, 5.4 A, 60 V, 8-Pin SO Vishay SQ9945BEY-T1_GE3

RS Stock No.: 146-4446Brand: VishayManufacturers Part No.: SQ9945BEY-T1_GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

60 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

137 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Height

1.55mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

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P.O.A.

N-Channel MOSFET, 5.4 A, 60 V, 8-Pin SO Vishay SQ9945BEY-T1_GE3

2500

Available in multiples of 2500
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

P.O.A.

N-Channel MOSFET, 5.4 A, 60 V, 8-Pin SO Vishay SQ9945BEY-T1_GE3
Stock information temporarily unavailable.

2500

Available in multiples of 2500
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

60 V

Package Type

SO

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

137 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Height

1.55mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more