Dual N-Channel MOSFET, 30 A, 40 V, 8-Pin SO Vishay SQJB42EP-T1_GE3

RS Stock No.: 134-9154Brand: VishayManufacturers Part No.: SQJB42EP-T1_GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Package Type

SO

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

48 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

6.25mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Width

5.26mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.12mm

Minimum Operating Temperature

-55 °C

Product details

Dual N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 30 A, 40 V, 8-Pin SO Vishay SQJB42EP-T1_GE3

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Dual N-Channel MOSFET, 30 A, 40 V, 8-Pin SO Vishay SQJB42EP-T1_GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Package Type

SO

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

48 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

6.25mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Width

5.26mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Height

1.12mm

Minimum Operating Temperature

-55 °C

Product details

Dual N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more