N-Channel MOSFET, 120 A, 60 V, 8-Pin D2PAK Vishay SUM50020E-GE3

RS Stock No.: 134-9166Brand: VishayManufacturers Part No.: SUM50020E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.41mm

Typical Gate Charge @ Vgs

126 nC @ 10 V

Width

9.65mm

Number of Elements per Chip

1

Forward Diode Voltage

1.5V

Height

4.82mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 120 A, 60 V, 8-Pin D2PAK Vishay SUM50020E-GE3

P.O.A.

N-Channel MOSFET, 120 A, 60 V, 8-Pin D2PAK Vishay SUM50020E-GE3
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Length

10.41mm

Typical Gate Charge @ Vgs

126 nC @ 10 V

Width

9.65mm

Number of Elements per Chip

1

Forward Diode Voltage

1.5V

Height

4.82mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor