N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB Vishay SUP50020E-GE3

RS Stock No.: 134-9705Brand: VishayManufacturers Part No.: SUP50020E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

126 nC @ 10 V

Length

10.51mm

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Product details

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P.O.A.

N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB Vishay SUP50020E-GE3
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2

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30P.O.A.

P.O.A.

N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB Vishay SUP50020E-GE3
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

126 nC @ 10 V

Length

10.51mm

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Product details

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more