MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Forward Transconductance Maximum Operating Temperature Width Forward Diode Voltage Typical Turn-On Delay Time Typical Turn-Off Delay Time Typical Power Gain Series Transistor Material Dimensions Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Number of Elements per Chip Minimum Operating Temperature Height Length
Infineon BUZ30A N-channel MOSFET Transistor, 21 A, 200 V SIPMOS, 3-Pin TO-220 Infineon N new products only 21 A 200 V 130 mΩ 4V 2.1V ±20 V TO-220 Through Hole 3 - Enhancement Power MOSFET 125 W - +150 °C 4.4mm - 30 ns 250 ns - SIPMOS - 10 x 4.4 x 9.25mm 1400 pF @ 25 V - 1 -55 °C 9.25mm 10mm
Infineon IPP110N20N3 G N-channel MOSFET Transistor, 88 A, 200 V OptiMOS 3, 3-Pin TO-220 Infineon N new products only 88 A 200 V 11 mΩ 4V 2V ±20 V TO-220 Through Hole 3 - Enhancement Power MOSFET 300 W - +175 °C 4.57mm - 18 ns 41 ns - OptiMOS 3 - 10.36 x 4.57 x 9.45mm 5340 pF @ 100 V 65 nC @ 10 V 1 -55 °C 9.45mm 10.36mm
Infineon BSP171P P-channel MOSFET Transistor, 1.9 A, 60 V SIPMOS, 4-Pin SOT-223 Infineon P new products only 1.9 A 60 V 300 mΩ 2V 1V ±20 V SOT-223 Surface Mount 4 - Enhancement Small Signal 1.8 W - +150 °C 3.5mm - 6 ns 208 ns - SIPMOS - 6.5 x 3.5 x 1.6mm 365 pF @ 25 V 13 nC @ 10 V 1 -55 °C 1.6mm 6.5mm
Infineon IPW90R340C3 N-channel MOSFET Transistor, 15 A, 900 V CoolMOS C3, 3-Pin TO-247 Infineon N new products only 15 A 900 V 340 mΩ 3.5V 2.5V ±20 V TO-247 Through Hole 3 - Enhancement Power MOSFET 208 W - +150 °C 5.21mm - 70 ns 400 ns - CoolMOS C3 - 16.13 x 5.21 x 21.1mm 2400 pF @ 100 V 11 nC @ 10 V 1 -55 °C 21.1mm 16.13mm
Infineon IPB320N20N3 G N-channel MOSFET Transistor, 34 A, 200 V OptiMOS 3, 3-Pin TO-263 Infineon N new products only 34 A 200 V 32 mΩ 4V 2V ±20 V TO-263 Surface Mount 3 - Enhancement Power MOSFET 136 W - +175 °C 9.45mm - 11 ns 21 ns - OptiMOS 3 - 10.31 x 9.45 x 4.57mm 1770 pF @ 100 V 22 nC @ 10 V 1 -55 °C 4.57mm 10.31mm
Vishay SUM50020E-GE3 N-channel MOSFET, 120 A, 60 V, 8-Pin TO-263 Vishay N new products only 120 A 60 V 2.6 mΩ 2.5V 1.2V ±20 V TO-263 Surface Mount 8 Single Enhancement Power MOSFET 375 W 145s +175 °C 9.65mm 1.5V 15 ns 55 ns - - - 10.41 x 9.65 x 4.82mm 11113 pF @ 30 V 126 nC @ 10 V 1 -55 °C 4.82mm 10.41mm
IXYS IXFL100N50P N-channel MOSFET, 70 A, 500 V PolarHVTM HiPerFET, 3-Pin ISOPLUS264
  • RS Stock No. 125-8039
  • Brand IXYS
  • Mfr. Part No. IXFL100N50P
IXYS N new products only 70 A 500 V 52 mΩ 5V 3V ±30 V ISOPLUS264 Through Hole 3 - Enhancement Power MOSFET 625 W 80s +150 °C 5.21mm 1.5V 36 ns 110 ns - PolarHVTM HiPerFET - 20.29 x 5.21 x 26.42mm 1700 pF @ 25 V 240 nC @ 10 V 1 -55 °C 26.42mm 20.29mm
IXYS IXFN200N10P N-channel MOSFET, 200 A, 100 V Polar HiPerFET, 4-Pin SOT-227B
  • RS Stock No. 125-8040
  • Brand IXYS
  • Mfr. Part No. IXFN200N10P
IXYS N new products only 200 A 100 V 7.5 mΩ 5V 3V ±20 V SOT-227B Surface Mount 4 - Enhancement Power MOSFET 680 W 97s +175 °C 25.07mm 1.5V 30 ns 150 ns - Polar HiPerFET - 38.23 x 25.07 x 9.6mm 7600 pF @ 25 V 235 nC @ 10 V 1 -55 °C 9.6mm 38.23mm
IXYS IXFN360N10T N-channel MOSFET, 360 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8041
  • Brand IXYS
  • Mfr. Part No. IXFN360N10T
IXYS N new products only 360 A 100 V 2.6 mΩ 4.5V 2.5V ±20 V SOT-227 Surface Mount 4 - Enhancement Power MOSFET 830 W 180s +175 °C 25.07mm 1.2V 47 ns 80 ns - GigaMOS Trench HiperFET - 38.23 x 25.07 x 9.6mm 3160 pF @ 25 V 525 nC @ 10 V 1 -55 °C 9.6mm 38.23mm
IXYS IXFN360N15T2 N-channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8042
  • Brand IXYS
  • Mfr. Part No. IXFN360N15T2
IXYS N new products only 310 A 150 V 4 mΩ 5V 2.5V ±20 V SOT-227 Surface Mount 4 - Enhancement Power MOSFET 1.07 kW 230s +175 °C 25.07mm 1.2V 50 ns 115 ns - GigaMOS TrenchT2 HiperFET - 38.23 x 25.07 x 9.6mm 3060 pF @ 25 V 715 nC @ 10 V 1 -55 °C 9.6mm 38.23mm
IXYS IXFN420N10T N-channel MOSFET, 420 A, 100 V GigaMOS Trench HiperFET, 4-Pin SOT-227
  • RS Stock No. 125-8043
  • Brand IXYS
  • Mfr. Part No. IXFN420N10T
IXYS N new products only 420 A 100 V 2.3 mΩ 5V 2.5V ±20 V SOT-227 Surface Mount 4 - Enhancement Power MOSFET 1.07 kW 185s +175 °C 25.07mm 1.2V 47 ns 115 ns - GigaMOS Trench HiperFET - 38.23 x 25.07 x 9.6mm 4390 pF @ 25 V 670 nC @ 10 V 1 -55 °C 9.6mm 38.23mm
IXYS IXFN44N100P N-channel MOSFET, 37 A, 1000 V Polar HiPerFET, 4-Pin SOT-227B
  • RS Stock No. 125-8044
  • Brand IXYS
  • Mfr. Part No. IXFN44N100P
IXYS N new products only 37 A 1000 V 220 mΩ 6.5V 3.5V ±30 V SOT-227B Surface Mount 4 - Enhancement Power MOSFET 890 W 35s +150 °C 25.07mm 1.5V 60 ns 90 ns - Polar HiPerFET - 38.23 x 25.07 x 9.6mm 1060 pF @ 25 V 305 nC @ 10 V 1 -55 °C 9.6mm 38.23mm
IXYS IXFR140N30P N-channel MOSFET, 70 A, 300 V Polar HiPerFET, 3-Pin ISOPLUS247
  • RS Stock No. 125-8045
  • Brand IXYS
  • Mfr. Part No. IXFR140N30P
IXYS N new products only 70 A 300 V 26 mΩ 5V 3V ±20 V ISOPLUS247 Through Hole 3 - Enhancement Power MOSFET 300 W 90s +150 °C 5.21mm 1.3V 30 ns 100 ns - Polar HiPerFET - 16.13 x 5.21 x 21.34mm 1830 pF @ 25 V 185 nC @ 10 V 1 -55 °C 21.34mm 16.13mm
IXYS IXTH110N25T N-channel MOSFET, 110 A, 250 V Trench, 3-Pin TO-247
  • RS Stock No. 125-8047
  • Brand IXYS
  • Mfr. Part No. IXTH110N25T
IXYS N new products only 110 A 250 V 24 mΩ 5V 3V ±20 V TO-247 Through Hole 3 - Enhancement Power MOSFET 694 W 110s +150 °C 5.3mm 1.2V 19 ns 60 ns - Trench - 16.26 x 5.3 x 21.46mm 9400 pF @ 25 V 157 nC @ 10 V 1 -55 °C 21.46mm 16.26mm
IXYS IXTN200N10L2 N-channel MOSFET, 178 A, 100 V Linear L2, 4-Pin SOT-227
  • RS Stock No. 125-8048
  • Brand IXYS
  • Mfr. Part No. IXTN200N10L2
IXYS N new products only 178 A 100 V 11 mΩ 4.5V 2V ±20 V SOT-227 Surface Mount 4 - Enhancement Power MOSFET 830 W 90s +150 °C 25.07mm 1.4V 40 ns 127 ns - Linear L2 - 38.23 x 25.07 x 9.6mm 3200 pF @ 25 V 540 nC @ 10 V 1 -55 °C 9.6mm 38.23mm
Infineon BSC009NE2LS5ATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 100 A 25 V 1.25 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 74 W 150s +150 °C 6.35mm 1V 4 ns 30 ns - OptiMOS 5 Si 5.49 x 6.35 x 1.1mm 2900 pF @ 12 V 43 nC @ 10 V 1 -55 °C 1.1mm 5.49mm
Infineon BSC009NE2LS5ATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 100 A 25 V 1.25 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 74 W 150s +150 °C 6.35mm 1V 4 ns 30 ns - OptiMOS 5 Si 5.49 x 6.35 x 1.1mm 2900 pF @ 12 V 43 nC @ 10 V 1 -55 °C 1.1mm 5.49mm
Infineon BSC009NE2LS5IATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 100 A 25 V 1.35 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 74 W 150s +150 °C 6.35mm 0.62V 5 ns 27 ns - OptiMOS 5 Si 5.49 x 6.35 x 1.1mm 2400 pF @ 12 V 36 nC @ 10 V 1 -55 °C 1.1mm 5.49mm
Infineon BSC009NE2LS5IATMA1 N-channel MOSFET, 100 A, 25 V OptiMOS 5, 8-Pin SuperSO Infineon N new products only 100 A 25 V 1.35 mΩ 2V 1.2V +16 V SuperSO Surface Mount 8 Single Enhancement Power MOSFET 74 W 150s +150 °C 6.35mm 0.62V 5 ns 27 ns - OptiMOS 5 - 5.49 x 6.35 x 1.1mm 2400 pF @ 12 V 36 nC @ 10 V 1 -55 °C 1.1mm 5.49mm
Infineon BSC020N03LSGATMA1 N-channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon N new products only 100 A 30 V 2.9 mΩ 2.2V 1V +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 96 W 130s +150 °C 6.35mm 1.1V 11 ns 42 ns - OptiMOS 3 - 5.35 x 6.35 x 1.1mm 5400 pF @ 15 V 34 nC @ 4.5 V 1 -55 °C 1.1mm 5.35mm
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