MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Minimum Operating Temperature Number of Elements per Chip Transistor Material
Infineon BUZ30A N-channel MOSFET Transistor, 21 A, 200 V SIPMOS, 3-Pin TO-220 Infineon N new products only 21 A 200 V 130 mΩ 4V 2.1V ±20 V TO-220 Through Hole 3 - Enhancement Power MOSFET 125 W 1400 pF @ 25 V - 250 ns 10 x 4.4 x 9.25mm 30 ns - SIPMOS 9.25mm 4.4mm 10mm - - +150 °C -55 °C 1 -
Infineon IPP110N20N3 G N-channel MOSFET Transistor, 88 A, 200 V OptiMOS 3, 3-Pin TO-220 Infineon N new products only 88 A 200 V 11 mΩ 4V 2V ±20 V TO-220 Through Hole 3 - Enhancement Power MOSFET 300 W 5340 pF @ 100 V 65 nC @ 10 V 41 ns 10.36 x 4.57 x 9.45mm 18 ns - OptiMOS 3 9.45mm 4.57mm 10.36mm - - +175 °C -55 °C 1 -
Infineon BSP171P P-channel MOSFET Transistor, 1.9 A, 60 V SIPMOS, 4-Pin SOT-223 Infineon P new products only 1.9 A 60 V 300 mΩ 2V 1V ±20 V SOT-223 Surface Mount 4 - Enhancement Small Signal 1.8 W 365 pF @ 25 V 13 nC @ 10 V 208 ns 6.5 x 3.5 x 1.6mm 6 ns - SIPMOS 1.6mm 3.5mm 6.5mm - - +150 °C -55 °C 1 -
Infineon IPW90R340C3 N-channel MOSFET Transistor, 15 A, 900 V CoolMOS C3, 3-Pin TO-247 Infineon N new products only 15 A 900 V 340 mΩ 3.5V 2.5V ±20 V TO-247 Through Hole 3 - Enhancement Power MOSFET 208 W 2400 pF @ 100 V 11 nC @ 10 V 400 ns 16.13 x 5.21 x 21.1mm 70 ns - CoolMOS C3 21.1mm 5.21mm 16.13mm - - +150 °C -55 °C 1 -
Infineon IPB320N20N3 G N-channel MOSFET Transistor, 34 A, 200 V OptiMOS 3, 3-Pin TO-263 Infineon N new products only 34 A 200 V 32 mΩ 4V 2V ±20 V TO-263 Surface Mount 3 - Enhancement Power MOSFET 136 W 1770 pF @ 100 V 22 nC @ 10 V 21 ns 10.31 x 9.45 x 4.57mm 11 ns - OptiMOS 3 4.57mm 9.45mm 10.31mm - - +175 °C -55 °C 1 -
Vishay SUM50020E-GE3 N-channel MOSFET, 120 A, 60 V, 8-Pin TO-263 Vishay N new products only 120 A 60 V 2.6 mΩ 2.5V 1.2V ±20 V TO-263 Surface Mount 8 Single Enhancement Power MOSFET 375 W 11113 pF @ 30 V 126 nC @ 10 V 55 ns 10.41 x 9.65 x 4.82mm 15 ns 145s - 4.82mm 9.65mm 10.41mm 1.5V - +175 °C -55 °C 1 -
Infineon BSC120N03LS G N-channel MOSFET Transistor, 39 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon N new products only 39 A 30 V 16.5 mΩ 2.2V 1V ±20 V TDSON Surface Mount 8 - Enhancement Power MOSFET 2.5 W 920 pF @ 15 V 11 nC @ 10 V 12 ns 6.35 x 5.35 x 1.1mm 2.7 ns - OptiMOS 3 1.1mm 5.35mm 6.35mm - - +150 °C -55 °C 1 -
Infineon BSP300 N-channel MOSFET Transistor, 190 mA, 800 V SIPMOS, 4-Pin SOT-223 Infineon N new products only 190 mA 800 V 20 Ω 4V 2V ±20 V SOT-223 Surface Mount 4 - Enhancement Small Signal 1.8 W 170 pF @ 25 V - 27 ns 6.5 x 3.5 x 1.6mm 7 ns - SIPMOS 1.6mm 3.5mm 6.5mm - - +150 °C -55 °C 1 -
Infineon IPA50R190CEXKSA2 N-channel MOSFET, 24.8 A, 500 V CoolMOS CE, 3+Tab-Pin TO-220FP Infineon N new products only 24.8 A 500 V 450 mΩ 3.5V 2.5V +20 V, +30 V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 32 W 1137 pF @ 100 V 47.2 nC @ 10 V 54 ns 10.65 x 4.9 x 16.15mm 9.5 ns - CoolMOS CE 16.15mm 4.9mm 10.65mm 0.85V - +150 °C -40 °C 1 -
Infineon IPA60R230P6XKSA1 N-channel MOSFET, 16.8 A, 600 V CoolMOS P6, 3+Tab-Pin TO-220FP Infineon N new products only 16.8 A 600 V 530 mΩ 4.5V 3.5V +20 (Static) V, +30 (Dynamic) V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 33 W 1450 pF @ 100 V 31 nC @ 10 V 38 ns 10.65 x 4.9 x 16.15mm 12 ns - CoolMOS P6 16.15mm 4.9mm 10.65mm 0.9V - +150 °C -55 °C 1 Si
Infineon IPA60R330P6XKSA1 N-channel MOSFET, 12 A, 600 V CoolMOS P6, 3+Tab-Pin TO-220FP Infineon N new products only 12 A 600 V 770 mΩ 4.5V 3.5V +20 V, +30 V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 32 W 1010 pF @ 100 V 22 nC @ 10 V 33 ns 10.65 x 4.9 x 16.15mm 12 ns - CoolMOS P6 16.15mm 4.9mm 10.65mm 0.9V - +150 °C -55 °C 1 Si
Infineon IPA60R400CEXKSA1 N-channel MOSFET, 14.7 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP Infineon N new products only 14.7 A 600 V 890 mΩ 3.5V 2.5V +20 (Static) V, +30 (Dynamic) V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 31 W 700 pF @ 100 V 32 nC @ 10 V 56 ns 10.65 x 4.9 x 16.15mm 11 ns - CoolMOS CE 16.15mm 4.9mm 10.65mm 0.9V - +150 °C -40 °C 1 -
Infineon IPA60R460CEXKSA1 N-channel MOSFET, 13.1 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP Infineon N new products only 13.1 A 600 V 1.05 Ω 3.5V 2.5V +20 (Static) V, +30 (Dynamic) V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 102 W 620 pF @ 100 V 28 nC @ 10 V 70 ns 10.65 x 4.9 x 16.15mm 11 ns - CoolMOS CE 16.15mm 4.9mm 10.65mm 0.9V - +150 °C -40 °C 1 -
Infineon IPA60R800CEXKSA1 N-channel MOSFET, 8.4 A, 600 V CoolMOS, 3+Tab-Pin TO-220FP Infineon N new products only 8.4 A 600 V 1.76 Ω 3.5V 2.5V +20 (Static) V, +30 (Dynamic) V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 74 W 373 pF @ 100 V 17.2 nC @ 10 V 50 ns 10.65 x 4.9 x 16.15mm 9 ns - CoolMOS 16.15mm 4.9mm 10.65mm 0.9V - +150 °C -40 °C 1 -
Infineon IPA65R650CEXKSA1 N-channel MOSFET, 10.1 A, 650 V CoolMOS, 3+Tab-Pin TO-220FP Infineon N new products only 10.1 A 650 V 1.4 Ω 3.5V 2.5V +20 (Static) V, +30 (Dynamic) V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 86 W 440 pF @ 100 V 23 nC @ 10 V 64 ns 10.65 x 4.9 x 16.15mm 10 ns - CoolMOS 16.15mm 4.9mm 10.65mm 0.9V - +150 °C -40 °C 1 -
Infineon IPA80R1K4P7XKSA1 N-channel MOSFET, 4 A, 800 V CoolMOS P7, 3+Tab-Pin TO-220FP Infineon N new products only 4 A 800 V 3.1 Ω 3.5V 2.5V +20 V, +30 V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 24 W 250 pF @ 500 V 10 nC @ 10 V 40 ns 10.65 x 4.9 x 16.15mm 10 ns - CoolMOS P7 16.15mm 4.9mm 10.65mm 0.9V - +150 °C -55 °C 1 -
Infineon IPA80R280P7XKSA1 N-channel MOSFET, 17 A, 800 V CoolMOS P7, 3+Tab-Pin TO-220FP Infineon N new products only 17 A 800 V 620 mΩ 3.5V 2.5V +20 V, +30 V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 30 W 1200 pF @ 500 V 36 nC @ 10 V 40 ns 10.65 x 4.9 x 16.15mm 10 ns - CoolMOS P7 16.15mm 4.9mm 10.65mm 0.9V - +150 °C -55 °C 1 -
Infineon IPA80R650CEXKSA1 N-channel MOSFET, 8 A, 800 V CoolMOS CE, 3+Tab-Pin TO-220FP Infineon N new products only 8 A 800 V 1.5 Ω 3.9V 2.1V +20 (Static) V, +30 (Dynamic) V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 33 W 1100 pF @ 100 V 45 nC @ 10 V 72 ns 10.65 x 4.9 x 16.15mm 25 ns - CoolMOS CE 16.15mm 4.9mm 10.65mm 1V - +150 °C -40 °C 1 Si
Infineon IPAW60R190CEXKSA1 N-channel MOSFET, 26.7 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP Infineon N new products only 26.7 A 600 V 440 mΩ 3.5V 2.5V +20 (Static) V, +30 (Dynamic) V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 34 W 1400 pF @ 100 V 63 nC @ 10 V 90 ns 11.3 x 4.9 x 16.27mm 12 ns - CoolMOS CE 16.27mm 4.9mm 11.3mm 0.9V - +150 °C -40 °C 1 -
Infineon IPAW60R380CEXKSA1 N-channel MOSFET, 15 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP Infineon N new products only 15 A 600 V 890 mΩ 3.5V 2.5V +20 (Static) V, +30 (Dynamic) V TO-220FP Through Hole 3+Tab Single Enhancement Power MOSFET 31 W 700 pF @ 100 V 32 nC @ 10 V 56 ns 11.3 x 4.9 x 16.27mm 11 ns - CoolMOS CE 16.27mm 4.9mm 11.3mm 0.9V - +150 °C -40 °C 1 -
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