MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Transistor Configuration Pin Count Channel Mode Category Maximum Power Dissipation Configuration Dimensions Forward Transconductance Transistor Material Height Series Number of Elements per Chip Width Minimum Operating Temperature Length Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Power Gain Maximum Operating Temperature Forward Diode Voltage Typical Turn-On Delay Time Typical Turn-Off Delay Time
Infineon IRFB3306PBF N-channel MOSFET, 160 A, 60 V, 3-Pin TO-220AB Infineon N new products only 160 A 60 V 4 mΩ 4V 2V ±20 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 230 W - 10.66 x 4.82 x 9.02mm - Si 9.02mm - 1 4.82mm -55 °C 10.66mm 4520 pF@ 50 V 85 nC @ 10 V - +175 °C - 15 ns 40 ns
Infineon SPP17N80C3 N-channel MOSFET, 17 A, 800 V, 3-Pin TO-220 Infineon N new products only 17 A 800 V 290 mΩ 3.9V 2.1V ±20 V TO-220 Through Hole Single 3 Enhancement Power MOSFET 227 W - 10.36 x 4.57 x 9.45mm - - 9.45mm - 1 4.57mm -55 °C 10.36mm 2300 pF @ 100 V 88 nC @ 10 V - +150 °C - 25 ns 72 ns
Semikron SKM180A020 N-channel MOSFET, 180 A, 200 V, 4-Pin SEMITRANSM1 Semikron N new products only 180 A 200 V 11 mΩ 4V 2.1V ±20 V SEMITRANSM1 Surface Mount Single 4 Enhancement Power MOSFET - Single 78 x 42 x 29mm - - 29mm SKM 1 42mm -40 °C 78mm 16 nF @ 25 V - - +150 °C - 100 ns 900 ns
Fairchild FDPF18N50 N-channel MOSFET, 18 A, 500 V, 3-Pin TO-220F Fairchild Semiconductor N new products only 18 A 500 V 265 mΩ - 3V ±30 V TO-220F Through Hole Single 3 Enhancement Power MOSFET 38.5 W - 10.16 x 4.7 x 9.19mm - Si 9.19mm - 1 4.7mm -55 °C 10.16mm 2200 pF@ 25 V 45 nC @ 10 V - +150 °C - 55 ns 95 ns
Infineon IRFB3206PBF N-channel MOSFET, 210 A, 60 V, 3-Pin TO-220AB Infineon N new products only 210 A 60 V 3 mΩ 4V 2V ±20 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 300 W - 10.67 x 4.83 x 9.02mm - Si 9.02mm - 1 4.83mm -55 °C 10.67mm 6540 pF@ 50 V 120 nC @ 10 V - +175 °C - 19 ns 55 ns
Fairchild FDP2532 N-channel MOSFET, 8 A, 150 V, 3-Pin TO-220AB Fairchild Semiconductor N new products only 8 A 150 V 16 mΩ - 2V ±20 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 310 W - 10.67 x 4.83 x 9.4mm - Si 9.4mm - 1 4.83mm -55 °C 10.67mm 5870 pF@ 25 V 82 nC @ 10 V - +175 °C - 16 ns 39 ns
Infineon BSP149 N-channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon N new products only 660 mA 200 V 1.8 Ω 1V 2.1V ±20 V SOT-223 Surface Mount Single 3 Depletion Small Signal 1.8 W - 6.5 x 3.5 x 1.6mm - Si 1.6mm SIPMOS 1 3.5mm -55 °C 6.5mm 326 pF @ 25 V 11 nC @ 5 V - +150 °C - 5.1 ns 45 ns
Infineon IRFP250MPBF N-channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon N new products only 30 A 200 V 75 mΩ 4V 2V ±20 V TO-247AC Through Hole Single 3 Enhancement Power MOSFET 214 W Single 16.13 x 5.2 x 21.1mm - Si 21.1mm - 1 5.2mm -55 °C 16.13mm 2159 pF @ 25 V 123 nC @ 10 V - +175 °C - 14 ns 41 ns
NXP NX2301P P-channel MOSFET, 2 A, 20 V, 3-Pin SOT-23
  • RS Stock No. 124-2336
  • Brand NXP
  • Mfr. Part No. NX2301P
NXP P new products only 2 A 20 V 120 mΩ 1.1V 0.5V ±8 V SOT-23 Surface Mount Single 3 Enhancement - 0.4 W - 3 x 1.4 x 1mm - Si 1mm - 1 1.4mm -55 °C 3mm 380 pF@ -6 V 4.5 nC - +150 °C - 7 ns 50 ns
Fairchild FCH043N60 N-channel MOSFET, 75 A, 600 V, 3-Pin TO-247 Fairchild Semiconductor N new products only 75 A 600 V 43 mΩ - 2.5V ±20 V dc, ±30 V ac TO-247 Through Hole Single 3 Enhancement - 592 W - 15.87 x 4.82 x 20.82mm - Si 20.82mm - 1 4.82mm -55 °C 15.87mm 9194 pF @ 400 V 163 nC @ 10 V - +150 °C - 46 ns 162 ns
Fairchild FQP47P06 P-channel MOSFET, 47 A, 60 V, 3-Pin TO-220AB Fairchild Semiconductor P new products only 47 A 60 V 26 mΩ - 2V ±25 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 160 W - 10.1 x 4.7 x 9.4mm - Si 9.4mm - 1 4.7mm -55 °C 10.1mm 2800 pF @ 25 V 84 nC @ 10 V - +175 °C - 50 ns 100 ns
Fairchild RFP50N06 N-channel MOSFET, 50 A, 60 V, 3-Pin TO-220AB Fairchild Semiconductor N new products only 50 A 60 V 22 mΩ - 2V ±20 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 131 W - 10.67 x 4.83 x 9.4mm - Si 9.4mm - 1 4.83mm -55 °C 10.67mm 2020 pF@ 25 V 125 nC @ 20 V - +175 °C - 12 ns 37 ns
Fairchild RFP70N06 N-channel MOSFET, 70 A, 60 V, 3-Pin TO-220AB Fairchild Semiconductor N new products only 70 A 60 V 14 mΩ - 2V ±20 V TO-220AB Through Hole Single 3 Enhancement Power MOSFET 150 W - 10.67 x 4.83 x 9.4mm - Si 9.4mm - 1 4.83mm -55 °C 10.67mm 2250 pF@ 25 V 120 nC @ 20 V - +175 °C - 10 ns 32 ns
Infineon BSP295 N-channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon N new products only 1.8 A 60 V 300 mΩ 2V 0.8V ±20 V SOT-223 Surface Mount Single 3 Enhancement Small Signal 1.8 W - 6.5 x 3.5 x 1.6mm - Si 1.6mm SIPMOS 1 3.5mm -55 °C 6.5mm 295 pF @ 25 V 14 nC @ 10 V - +150 °C - 5.4 ns 27 ns
Infineon IPW65R019C7 N-channel MOSFET, 75 A, 700 V, 3-Pin TO-247 Infineon N new products only 75 A 700 V 19 mΩ - - ±30 V TO-247 Through Hole Single 3 Enhancement Power MOSFET 446 W Single 16.13 x 21.1 x 5.21mm - Si 5.21mm - 1 21.1mm -55 °C 16.13mm 9900 pF @ 400 V 215 nC @ 10 V - +150 °C 0.9V 30 ns 106 ns
Infineon IPW90R120C3 N-channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Infineon N new products only 36 A 900 V 120 mΩ 3.5V 2.5V ±20 V TO-247 Through Hole Single 3 Enhancement Power MOSFET 417 W - 16.13 x 5.21 x 21.1mm - Si 21.1mm - 1 5.21mm -55 °C 16.13mm 6800 pF @ 100 V 270 nC @ 10 V - +150 °C - 70 ns 400 ns
Infineon IRF4905SPBF P-channel MOSFET, 74 A, 55 V, 3-Pin D2PAK Infineon P new products only 74 A 55 V 20 mΩ 4V 2V ±20 V D2PAK Surface Mount Single 3 Enhancement Power MOSFET 3.8 W - 10.54 x 8.81 x 4.69mm - Si 4.69mm - 1 8.81mm -55 °C 10.54mm 3400 pF@ 25 V 180 nC @ 10 V - +175 °C - 18 ns 61 ns
Infineon IRFP4332PBF N-channel MOSFET, 57 A, 250 V, 3-Pin TO-247AC Infineon N new products only 57 A 250 V 33 mΩ 5V 3V ±30 V TO-247AC Through Hole Single 3 Enhancement Power MOSFET 360 W - 15.9 x 5.3 x 20.3mm - Si 20.3mm - 1 5.3mm -40 °C 15.9mm 5860 pF@ 25 V 99 nC @ 10 V - +175 °C - - -
Infineon IRFP4768PBF N-channel MOSFET, 93 A, 250 V, 3-Pin TO-247AC Infineon N new products only 93 A 250 V 14.5 mΩ 5V 3V ±20 V TO-247AC Through Hole Single 3 Enhancement Power MOSFET 520 W - 15.87 x 5.31 x 20.7mm - Si 20.7mm - 1 5.31mm -55 °C 15.87mm 10880 pF@ 50 V 180 nC @ 10 V - +175 °C - 36 ns 57 ns
NXP BSS138BK N-channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23
  • RS Stock No. 124-2289
  • Brand NXP
  • Mfr. Part No. BSS138BK
NXP N new products only 360 mA 60 V 1.6 Ω 1.6V 0.48V ±20 V SOT-23 Surface Mount Single 3 Enhancement - 0.42 W - 3 x 1.4 x 1mm - Si 1mm - 1 1.4mm -55 °C 3mm 42 pF @ 10 V 0.6 nC @ 4.5 V - +150 °C - 5 ns 38 ns
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