MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Maximum Operating Temperature Number of Elements per Chip Length Height Transistor Material Forward Transconductance Width Typical Turn-On Delay Time Typical Turn-Off Delay Time Dimensions Typical Gate Charge @ Vgs Typical Input Capacitance @ Vds Series Minimum Operating Temperature Forward Diode Voltage
Microchip DN3525N8-G N-channel MOSFET, 360 mA, 250 V Depletion, 4-Pin TO-243AA Microchip N 360 mA 250 V 6 Ω 3.5V - ±20 V TO-243AA Surface Mount 4 Single Depletion - 1.6 W +150 °C 1 4.6mm 1.6mm Si - 2.6mm 20 ns 25 ns 4.6 x 2.6 x 1.6mm - 270 pF @ 25 V - -55 °C -
Microchip VN2410L-G N-channel MOSFET, 190 mA, 240 V, 3-Pin TO-92 Microchip N 190 mA 240 V 10 Ω 2V - ±20 V TO-92 Through Hole 3 Single Enhancement - 1 W +150 °C 1 5.2mm 5.33mm Si - 4.19mm 8 ns 23 ns 5.2 x 4.19 x 5.33mm - 125 pF @ 25 V - -55 °C -
Microchip VN2222LL-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N 230 mA 60 V 7.5 Ω 2.5V - ±30 V TO-92 Through Hole 3 Single Enhancement - 1 W +150 °C 1 5.08mm 5.33mm Si 100s 4.06mm 10 ns 10 ns 5.08 x 4.06 x 5.33mm - 60 pF @ 25 V - -55 °C 0.85V
Microchip DN2540N3-G N-channel MOSFET, 120 mA, 400 V Depletion, 3-Pin TO-92 Microchip N 120 mA 400 V 25 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Depletion - 1 W +150 °C 1 5.2mm 5.33mm Si - 4.19mm 10 ns 15 ns 5.2 x 4.19 x 5.33mm - 200 pF @ 25 V - -55 °C -
Microchip TP2104N3-G P-channel MOSFET, 175 mA, 40 V, 3-Pin TO-92 Microchip P 175 mA 40 V 10 Ω 2V - ±20 V TO-92 Through Hole 3 Single Enhancement - 740 mW +150 °C 1 5.08mm 5.33mm Si 200s 4.06mm 4 ns 5 ns 5.08 x 4.06 x 5.33mm - 35 pF @ -25 V - -55 °C 2V
Microchip VP2106N3-G P-channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip P 250 mA 60 V 15 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Enhancement - 1 W +150 °C 1 5.08mm 5.33mm Si 200s 4.06mm 4 ns 5 ns 5.08 x 4.06 x 5.33mm - 45 pF @ -25 V - -55 °C 2V
Microchip DN2535N3-G N-channel MOSFET, 120 mA, 350 V Depletion, 3-Pin TO-92 Microchip N 120 mA 350 V 25 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Depletion - 1 W +150 °C 1 5.2mm 5.33mm Si - 4.19mm 10 ns 15 ns 5.2 x 4.19 x 5.33mm - 200 pF @ 25 V - -55 °C -
Microchip DN2540N5-G N-channel MOSFET, 500 mA, 400 V Depletion, 3-Pin TO-220 Microchip N 500 mA 400 V 25 Ω 3.5V - ±20 V TO-220 Through Hole 3 Single Depletion - 15 W +150 °C 1 10.7mm 16.51mm Si - 4.826mm 10 ns 15 ns 10.7 x 4.826 x 16.51mm - 200 pF @ 25 V - -55 °C -
Microchip DN2530N3-G N-channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92 Microchip N 175 mA 300 V 12 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Depletion - 740 mW +150 °C 1 5.2mm 5.33mm Si - 4.19mm 10 ns 15 ns 5.2 x 4.19 x 5.33mm - 300 pF@ 25 V - -55 °C -
Microchip DN3545N3-G N-channel MOSFET, 130 mA, 450 V Depletion, 3-Pin TO-92 Microchip N 130 mA 450 V 20 Ω 3.5V - ±20 V TO-92 Through Hole 3 Single Depletion - 740 mW +150 °C 1 5.2mm 5.33mm Si - 4.19mm 20 ns 30 ns 5.2 x 4.19 x 5.33mm - 360 pF@ 25 V - -55 °C -
Microchip DN3765K4-G N-channel MOSFET, 300 mA, 650 V Depletion, 3-Pin TO-252 Microchip N 300 mA 650 V 8 Ω 3.5V - ±20 V TO-252 Surface Mount 3 Single Depletion - 2.5 W +150 °C 1 6.2mm 2.39mm Si - 6.73mm 50 ns 75 ns 6.2 x 6.73 x 2.39mm - 825 pF@ 25 V - -55 °C -
Microchip DN3535N8-G N-channel MOSFET, 230 mA, 350 V Depletion, 4-Pin TO-243AA Microchip N 230 mA 350 V 10 Ω 3.5V - ±20 V TO-243AA Surface Mount 4 Single Depletion - 1.6 W +150 °C 1 4.6mm 1.6mm Si - 2.6mm 15 ns 20 ns 4.6 x 2.6 x 1.6mm - 360 pF@ 25 V - -55 °C -
Microchip 2N7008-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N 230 mA 60 V 7.5 Ω 2.5V 1V ±30 V TO-92 Through Hole 3 Single Enhancement Power MOSFET 1 W +150 °C 1 5.08mm 5.33mm Si - 4.06mm 20 ns 20 ns 5.08 x 4.06 x 5.33mm - 50 pF @ 25 V (Max) - -55 °C 1.5V
Microchip DN1509N8-G N-channel MOSFET, 360 mA, 90 V Depletion, 4-Pin TO-243AA Microchip N 360 mA 90 V 6 Ω 3.5V - ±20 V TO-243AA Surface Mount 4 Single Depletion - 1.6 W +150 °C 1 4.6mm 1.6mm Si - 2.6mm 12 ns 15 ns 4.6 x 2.6 x 1.6mm - 70 pF @ 25 V - -55 °C -
Microchip DN2625DK6-G N-channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN Microchip N 1.1 A 250 V 3.5 Ω - - ±20 V DFN Surface Mount 8 Single Depletion Power MOSFET - +150 °C 1 5.1mm 0.85mm Si - 5.1mm 10 ns 10 ns 5.1 x 5.1 x 0.85mm 7.04 nC @ 1.5 V 800 pF @ 25 V - -55 °C 1.8V
Microchip LND01K1-G N-channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip N 330 mA 9 V 1.4 Ω - - 0.6 V SOT-23 Surface Mount 5 Single Depletion - 360 mW +125 °C 1 3.05mm 1.3mm Si - 1.75mm 3.8 ns 1 ns 3.05 x 1.75 x 1.3mm - 46 pF - -25 °C -
Microchip LND150N3-G N-channel MOSFET, 30 mA, 500 V Depletion, 3-Pin TO-92 Microchip N 30 mA 500 V 1 kΩ 3V - ±20 V TO-92 Through Hole 3 Single Depletion Power MOSFET 740 mW +150 °C 1 5.2mm 5.33mm Si - 4.19mm 90 ns 100 ns 5.2 x 4.19 x 5.33mm - 7.5 pF @ 25 V - -55 °C -
Microchip LND150N8-G N-channel MOSFET, 30 mA, 500 V Depletion, 4-Pin TO-243AA Microchip N 30 mA 500 V 1 kΩ 3V - ±20 V TO-243AA Surface Mount 4 Single Depletion Power MOSFET 1.6 W +150 °C 1 4.6mm 1.6mm Si - 2.6mm 90 ns 100 ns 4.6 x 2.6 x 1.6mm - 7.5 pF @ 25 V - -55 °C -
Microchip MCP87022T-U/MF N-channel MOSFET, 100 A, 25 V MCP87, 8-Pin DFN Microchip N 100 A 25 V 2.6 mΩ 1.6V - -8 V, 10 V DFN Surface Mount 8 Single Enhancement Power MOSFET 2.2 W +150 °C 1 5mm 1mm Si - 6mm 7.6 ns 21 ns 5 x 6 x 1mm 25.5 nC @ 4.5 V 2310 pF @ 12.5 V MCP87 -55 °C -
Microchip MCP87050T-U/MF N-channel MOSFET, 100 A, 25 V MCP87, 8-Pin DFN Microchip N 100 A 25 V 6 mΩ 1.6V - -8 V, 10 V DFN Surface Mount 8 Single Enhancement Power MOSFET 2.2 W +150 °C 1 5mm 1mm Si - 6mm 5 ns 11 ns 5 x 6 x 1mm 12.5 nC @ 4.5 V 1040 pF @ 12.5 V MCP87 -55 °C -
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