MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Minimum Operating Temperature Number of Elements per Chip Transistor Material
ON Semiconductor BSS138LT1G N-channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 ON Semiconductor N 200 mA 50 V 3.5 Ω 1.5V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 40 pF@ 25 V - 20 ns 2.9 x 1.3 x 0.94mm 20 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor 2N7002LT3G N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 115 mA 60 V 7.5 Ω 2.5V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 300 mW 50 pF @ 25 V - 40 ns 3.04 x 1.4 x 1.01mm 20 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor 2N7002LT1G N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 115 mA 60 V 7.5 Ω 2.5V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 300 mW 50 pF@ 25 V - 40 ns 2.9 x 1.3 x 0.94mm 20 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4501NT1G N-channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 ON Semiconductor N 3.2 A 20 V 80 mΩ 1.2V - ±12 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.25 W 200 pF@ 10 V 2.4 nC @ 4.5 V 12 ns 2.9 x 1.3 x 0.94mm 6.5 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTA4151PT1G P-channel MOSFET, 760 mA, 20 V, 3-Pin SC-75 ON Semiconductor P 760 mA 20 V 1 Ω 1.2V - ±6 V SC-75 Surface Mount 3 Single Enhancement Small Signal 300 mW 156 pF @ -5 V 2.1 nC @ 4.5 V 29 ns 1.65 x 0.9 x 0.8mm 8 ns - - 0.8mm 0.9mm 1.65mm - +150 °C -55 °C 1 Si
ON Semiconductor 2N7002WT1G N-channel MOSFET, 340 mA, 60 V, 3-Pin SC-70 ON Semiconductor N 340 mA 60 V 2.5 Ω 2.5V - ±20 V SC-70 Surface Mount 3 Single Enhancement Small Signal 330 mW 24.5 pF @ 20 V 0.7 nC @ 4.5 V 55.8 ns 2.2 x 1.35 x 0.9mm 12.2 ns - - 0.9mm 1.35mm 2.2mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4502PT1G P-channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 ON Semiconductor P 1.9 A 30 V 350 mΩ 3V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.25 W 200 pF@ -15 V 6 nC @ 10 V 19 ns 3.04 x 1.4 x 1.01mm 5.2 ns - - 1mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor NTJD1155LT1G Dual N/P-channel MOSFET, 1.3 A, 8 V, 6-Pin SC-88 ON Semiconductor N, P 1.3 A 8 V 320 mΩ 1V - 8 (N-Channel) V SC-88 Surface Mount 6 N+P Loadswitch Enhancement Power MOSFET 400 mW - - - 2.2 x 1.35 x 1mm - - - 1mm 1.35mm 2.2mm - +150 °C -55 °C 2 Si
ON Semiconductor 2N7002KT1G N-channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 380 mA 60 V 2.5 Ω 2.3V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 420 mW 24.5 pF @ 20 V 0.7 nC @ 4.5 V 55.8 ns 3.04 x 1.4 x 1.01mm 12.2 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4003NT3G N-channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 ON Semiconductor N 560 mA 30 V 2 Ω 1.4V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 830 mW 21 pF @ 5 V 29 nC @ 4.5 V 65.1 ns 3.04 x 1.4 x 1.01mm 16.7 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor NTF5P03T3G P-channel MOSFET, 2.9 A, 30 V, 3+Tab-Pin SOT-223 ON Semiconductor P 2.9 A 30 V 150 mΩ 3V - ±20 V SOT-223 Surface Mount 3+Tab Single Enhancement Power MOSFET 3.13 W 500 pF @ -25 V 15 nC @ 10 V 38 ns 6.7 x 3.7 x 1.65mm 16 ns - - 1.65mm 3.7mm 6.7mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4003NT1G N-channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 ON Semiconductor N 560 mA 30 V 2 Ω 1.4V - ±20 V SOT-23 Surface Mount 3 Single Enhancement - 690 mW 21 pF@ 5 V 1.15 nC @ 5 V 65.1 ns 3.04 x 1.4 x 1.01mm 16.7 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor NTA4153NT1G N-channel MOSFET, 915 mA, 20 V, 3-Pin SOT-416 ON Semiconductor N 915 mA 20 V 9.5 Ω 1.1V - ±6 V SOT-416 Surface Mount 3 Single Enhancement Power MOSFET 300 mW 110 pF@ 16 V 1.82 nC @ 4.5 V 25 ns 0.8 x 1.6 x 0.8mm 3.7 ns - - 0.8mm 1.6mm 0.8mm - +150 °C -55 °C 1 Si
ON Semiconductor NTR4171PT1G P-channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 ON Semiconductor P 3.5 A 30 V 150 mΩ 1.4V - ±12 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.25 W 720 pF@ -15 V 15.6 nC @ 10 V, 7.4 nC @ 4.5 V 25 ns, 32 ns 3.04 x 1.4 x 1.01mm 8 ns, 9 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor NTS4001NT1G N-channel MOSFET, 270 mA, 30 V, 3-Pin SC-70 ON Semiconductor N 270 mA 30 V 2 Ω 1.5V - ±20 V SC-70 Surface Mount 3 Single Enhancement Small Signal 330 mW 20 pF @ 5 V 0.9 nC @ 5 V 94 ns 2.2 x 1.35 x 0.9mm 17 ns - - 0.9mm 1.35mm 2.2mm - +150 °C -55 °C 1 Si
ON Semiconductor BSS138LT3G N-channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 ON Semiconductor N 200 mA 50 V 3.5 Ω 1.5V - ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 40 pF@ 25 V - 20 ns 2.9 x 1.3 x 0.94mm 20 ns - - 0.94mm 1.3mm 2.9mm - +150 °C -55 °C 1 Si
ON Semiconductor MGSF1N02LT1G N-channel MOSFET, 750 mA, 20 V, 3-Pin SOT-23 ON Semiconductor N 750 mA 20 V 130 mΩ 2.4V - ±20 V dc SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 400 mW 125 pF @ 5 V - 16 ns 3.04 x 1.4 x 1.01mm 2.5 ns - - 1.01mm 1.4mm 3.04mm - +150 °C -55 °C 1 Si
ON Semiconductor NTD5867NLT4G N-channel MOSFET, 20 A, 60 V, 3-Pin DPAK ON Semiconductor N 20 A 60 V 50 mΩ 2.5V - ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 36 W 675 pF @ 25 V 15 nC @ 10 V 18.2 ns 6.73 x 6.22 x 2.38mm 6.5 ns - - 2.38mm 6.22mm 6.73mm - +150 °C -55 °C 1 Si
ON Semiconductor NTMD6N02R2G Dual N-channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC ON Semiconductor N 6.5 A 20 V 49 mΩ 1.2V - ±12 V SOIC Surface Mount 8 Isolated Enhancement Power MOSFET 2 W 785 pF @ 16 V 12 nC @ 4.5 V 45 ns 5 x 4 x 1.5mm 12 ns - - 1.5mm 4mm 5mm - +150 °C -55 °C 2 Si
ON Semiconductor ECH8656-TL-H Dual N-channel MOSFET, 7.5 A, 20 V, 8-Pin ECH ON Semiconductor N 7.5 A 20 V 48 mΩ 1.3V - ±10 V ECH Surface Mount 8 Isolated Enhancement Power MOSFET 1.3 W 1060 pF @ 10 V 10.8 nC @ 4.5 V 68 ns 2.9 x 2.3 x 0.9mm 17.5 ns - - 0.9mm 2.3mm 2.9mm - +150 °C - 2 Si
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