MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Transistor Configuration Pin Count Channel Mode Category Maximum Power Dissipation Maximum Operating Temperature Minimum Operating Temperature Forward Transconductance Number of Elements per Chip Transistor Material Height Typical Turn-On Delay Time Typical Turn-Off Delay Time Dimensions Forward Diode Voltage Width Length Series Typical Gate Charge @ Vgs Typical Input Capacitance @ Vds
ON Semiconductor NTA7002NT1G N-channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 ON Semiconductor N 150 mA 30 V 7.5 Ω 1.5V - ±10 V SC-75 Surface Mount Single 3 Enhancement Small Signal 300 mW +150 °C -55 °C - 1 Si 0.8mm 13 ns 98 ns 1.65 x 0.9 x 0.8mm - 0.9mm 1.65mm - - 11.5 pF @ 5 V
ON Semiconductor BSS138LT1G N-channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 ON Semiconductor N 200 mA 50 V 3.5 Ω 1.5V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 225 mW +150 °C -55 °C - 1 Si 0.94mm 20 ns 20 ns 2.9 x 1.3 x 0.94mm - 1.3mm 2.9mm - - 40 pF@ 25 V
ON Semiconductor NTJD5121NT1G Dual N-channel MOSFET, 300 mA, 60 V, 6-Pin SC-88 ON Semiconductor N 300 mA 60 V 2.5 Ω 2.5V - ±20 V SC-88 Surface Mount Isolated 6 Enhancement Power MOSFET 266 mW +150 °C -55 °C - 2 Si 1mm 22 ns 34 ns 2.2 x 1.35 x 1mm - 1.35mm 2.2mm - 0.9 nC @ 4.5 V 26 pF @ 20 V
ON Semiconductor 2N7002LT1G N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 115 mA 60 V 7.5 Ω 2.5V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Small Signal 300 mW +150 °C -55 °C - 1 Si 0.94mm 20 ns 40 ns 2.9 x 1.3 x 0.94mm - 1.3mm 2.9mm - - 50 pF@ 25 V
ON Semiconductor NTUD3169CZT5G Dual N/P-channel MOSFET, 250 mA, 280 mA, 20 V, 6-Pin SOT-963 ON Semiconductor N, P 250 mA, 280 mA 20 V 4.5 Ω, 10 Ω 1V - ±8 V SOT-963 Surface Mount Isolated 6 Enhancement Small Signal 200 mW +150 °C -55 °C - 2 Si 0.4mm 16.5 ns, 26 ns 142 ns, 196 ns 1.05 x 0.85 x 0.4mm - 0.85mm 1.05mm - - 12.5 pF @ 15 V
ON Semiconductor 2N7002KT1G N-channel MOSFET, 380 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 380 mA 60 V 2.5 Ω 2.3V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Small Signal 420 mW +150 °C -55 °C - 1 Si 1.01mm 12.2 ns 55.8 ns 3.04 x 1.4 x 1.01mm - 1.4mm 3.04mm - 0.7 nC @ 4.5 V 24.5 pF @ 20 V
ON Semiconductor NTA4151PT1G P-channel MOSFET, 760 mA, 20 V, 3-Pin SC-75 ON Semiconductor P 760 mA 20 V 1 Ω 1.2V - ±6 V SC-75 Surface Mount Single 3 Enhancement Small Signal 300 mW +150 °C -55 °C - 1 Si 0.8mm 8 ns 29 ns 1.65 x 0.9 x 0.8mm - 0.9mm 1.65mm - 2.1 nC @ 4.5 V 156 pF @ -5 V
ON Semiconductor NTR4501NT1G N-channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 ON Semiconductor N 3.2 A 20 V 80 mΩ 1.2V - ±12 V SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 1.25 W +150 °C -55 °C - 1 Si 0.94mm 6.5 ns 12 ns 2.9 x 1.3 x 0.94mm - 1.3mm 2.9mm - 2.4 nC @ 4.5 V 200 pF@ 10 V
ON Semiconductor NTR1P02T1G P-channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 ON Semiconductor P 1 A 20 V 180 mΩ 2.3V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 400 mW +150 °C -55 °C - 1 Si 0.94mm 7 ns 9 ns 2.9 x 1.3 x 0.94mm - 1.3mm 2.9mm - 2.5 nC @ 5 V 165 pF@ 5 V
ON Semiconductor 2N7002LT3G N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 115 mA 60 V 7.5 Ω 2.5V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Small Signal 300 mW +150 °C -55 °C - 1 Si 1.01mm 20 ns 40 ns 3.04 x 1.4 x 1.01mm - 1.4mm 3.04mm - - 50 pF @ 25 V
ON Semiconductor NTR4003NT3G N-channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 ON Semiconductor N 560 mA 30 V 2 Ω 1.4V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Small Signal 830 mW +150 °C -55 °C - 1 Si 1.01mm 16.7 ns 65.1 ns 3.04 x 1.4 x 1.01mm - 1.4mm 3.04mm - 29 nC @ 4.5 V 21 pF @ 5 V
ON Semiconductor MMBF170LT1G N-channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 500 mA 60 V 5 Ω 3V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 225 mW +150 °C -55 °C - 1 Si 0.94mm 10 ns 10 ns 2.9 x 1.3 x 0.94mm - 1.3mm 2.9mm - - 60 pF@ 10 V
ON Semiconductor BSS138LT3G N-channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 ON Semiconductor N 200 mA 50 V 3.5 Ω 1.5V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 225 mW +150 °C -55 °C - 1 Si 0.94mm 20 ns 20 ns 2.9 x 1.3 x 0.94mm - 1.3mm 2.9mm - - 40 pF@ 25 V
ON Semiconductor NTF5P03T3G P-channel MOSFET, 2.9 A, 30 V, 3+Tab-Pin SOT-223 ON Semiconductor P 2.9 A 30 V 150 mΩ 3V - ±20 V SOT-223 Surface Mount Single 3+Tab Enhancement Power MOSFET 3.13 W +150 °C -55 °C - 1 Si 1.65mm 16 ns 38 ns 6.7 x 3.7 x 1.65mm - 3.7mm 6.7mm - 15 nC @ 10 V 500 pF @ -25 V
ON Semiconductor NTR4171PT1G P-channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 ON Semiconductor P 3.5 A 30 V 150 mΩ 1.4V - ±12 V SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 1.25 W +150 °C -55 °C - 1 Si 1.01mm 8 ns, 9 ns 25 ns, 32 ns 3.04 x 1.4 x 1.01mm - 1.4mm 3.04mm - 15.6 nC @ 10 V, 7.4 nC @ 4.5 V 720 pF@ -15 V
ON Semiconductor NTJD4152PT1G Dual P-channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 ON Semiconductor P 880 mA 20 V 1 Ω 1.2V - ±12 V SOT-363 Surface Mount Isolated 6 Enhancement - 350 mW +150 °C -55 °C - 2 Si 1mm 5.8 ns 13.5 ns 2.2 x 1.35 x 1mm - 1.35mm 2.2mm - 2.2 nC @ 4.5 V 155 pF @ -20 V
ON Semiconductor NTR5198NLT1G N-channel MOSFET, 2.2 A, 60 V, 3-Pin SOT-23 ON Semiconductor N 2.2 A 60 V 155 mΩ 2.5V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 900 mW +150 °C -55 °C - 1 Si 1.01mm 5 ns 13 ns 3.04 x 1.4 x 1.01mm - 1.4mm 3.04mm - 5.1 nC @ 10 V 182 pF @ 25 V
ON Semiconductor BSS123LT1G N-channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 ON Semiconductor N 170 mA 100 V 6 Ω 2.8V - ±20 V SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 225 mW +150 °C -55 °C - 1 Si 0.94mm 20 ns 40 ns 2.9 x 1.3 x 0.94mm - 1.3mm 2.9mm - - 20 pF@ 25 V
ON Semiconductor NTMD6N02R2G Dual N-channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC ON Semiconductor N 6.5 A 20 V 49 mΩ 1.2V - ±12 V SOIC Surface Mount Isolated 8 Enhancement Power MOSFET 2 W +150 °C -55 °C - 2 Si 1.5mm 12 ns 45 ns 5 x 4 x 1.5mm - 4mm 5mm - 12 nC @ 4.5 V 785 pF @ 16 V
ON Semiconductor MGSF2N02ELT1G N-channel MOSFET, 2.8 A, 20 V, 3-Pin SOT-23 ON Semiconductor N 2.8 A 20 V 115 mΩ 1V - ±8 V dc SOT-23 Surface Mount Single 3 Enhancement Power MOSFET 1.25 W +150 °C -55 °C - 1 Si 1.01mm 6 ns 28 ns 3.04 x 1.4 x 1.01mm - 1.4mm 3.04mm - 0.6 nC @ 4 V 150 pF @ 5 V
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