MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Minimum Operating Temperature Number of Elements per Chip Transistor Material
Texas Instruments CSD18504Q5A N-channel MOSFET, 75 A, 40 V NexFET, 8-Pin SON Texas Instruments N 75 A 40 V 9.8 mΩ 2.4V 1.5V ±20 V SON Surface Mount 8 Single Enhancement Power MOSFET 3.1 W 1380 pF @ 20 V 7.7 nC @ 4.5 V 12 ns 5.8 x 5 x 1.1mm 3.2 ns - NexFET 1.1mm 5mm 5.8mm - +150 °C -55 °C 1 Si
Texas Instruments CSD18533Q5A N-channel MOSFET, 100 A, 60 V NexFET, 8-Pin SON Texas Instruments N 100 A 60 V 8.5 mΩ 2.3V 1.5V ±20 V SON Surface Mount 8 Single Enhancement Power MOSFET 3.2 W 2200 pF @ 30 V 14 nC @ 4.5 V 15 ns 5.8 x 5 x 1.1mm 5.2 ns - NexFET 1.1mm 5mm 5.8mm - +150 °C -55 °C 1 Si
Texas Instruments CSD17313Q2 N-channel MOSFET, 5 A, 30 V NexFET, 6-Pin SON Texas Instruments N 5 A 30 V 42 mΩ 1.8V 0.9V +10/-8 V SON Surface Mount 6 Single Enhancement Power MOSFET 2.3 W 260 pF @ 15 V 2.1 nC @ 4.5 V 4.2 ns 2 x 2 x 0.8mm 2.8 ns - NexFET 0.8mm 2mm 2mm - +150 °C -55 °C 1 Si
Texas Instruments CSD19534KCS N-channel MOSFET, 100 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N 100 A 100 V 20 mΩ - - ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 118 W 1290 pF @ 50 V 17.1 nC @ 0 V 9 ns 10.67 x 4.7 x 16.51mm 6 ns 80s NexFET 16.51mm 4.7mm 10.67mm 1.1V +175 °C -55 °C 1 Si
Texas Instruments CSD18533KCS N-channel MOSFET, 118 A, 60 V NexFET, 3-Pin TO-220 Texas Instruments N 118 A 60 V 9 mΩ 2.3V 1.5V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 192 W 2420 pF @ 30 V 14 nC @ 4.5 V 13 ns 10.67 x 4.7 x 16.51mm 5.7 ns - NexFET 16.51mm 4.7mm 10.67mm - +175 °C -55 °C 1 Si
Texas Instruments CSD19531KCS N-channel MOSFET, 110 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N 110 A 100 V 8.8 mΩ 3.3V 2.2V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 214 W 2980 pF @ 50 V 38 nC @ 10 V 16 ns 10.67 x 4.7 x 16.51mm 8.4 ns - NexFET 16.51mm 4.7mm 10.67mm - +175 °C -55 °C 1 Si
Texas Instruments CSD18563Q5A N-channel MOSFET, 100 A, 60 V NexFET, 8-Pin VSON-FET Texas Instruments N 100 A 60 V 10.8 mΩ 2.4V 1.7V ±20 V VSON-FET Surface Mount 8 Single Enhancement Power MOSFET 3.2 W 1150 pF @ 30 V 15 nC @ 10 V 11.4 ns 5.8 x 5 x 1.1mm 3.2 ns - NexFET 1.1mm 5mm 5.8mm - +150 °C -55 °C 1 Si
Texas Instruments CSD19536KCS N-channel MOSFET, 259 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N 259 A 100 V 3.2 mΩ 3.2V 2.1V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 375 W 9250 pF @ 50 V 118 nC @ 10 V 38 ns 10.67 x 4.7 x 16.51mm 14 ns - NexFET 16.51mm 4.7mm 10.67mm - +175 °C -55 °C 1 Si
Texas Instruments CSD18532KCS N-channel MOSFET, 169 A, 60 V NexFET, 3-Pin TO-220 Texas Instruments N 169 A 60 V 5.3 mΩ 2.2V 1.5V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 250 W 3900 pF @ 30 V 21 nC @ 4.5 V 24.2 ns 10.67 x 4.7 x 16.51mm 7.8 ns - NexFET 16.51mm 4.7mm 10.67mm - +175 °C -55 °C 1 Si
Texas Instruments CSD19536KCS N-channel MOSFET, 259 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N 259 A 100 V 3.2 mΩ 3.2V 2.1V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 375 W 9250 pF @ 50 V 118 nC @ 10 V 38 ns 10.67 x 4.7 x 16.51mm 14 ns - NexFET 16.51mm 4.7mm 10.67mm - +175 °C -55 °C 1 Si
Texas Instruments BQ500101DPCT Dual P-channel MOSFET, 10 A, 30 V NexFET, 8-Pin VSON-CLIP Texas Instruments P 10 A 30 V - - 3.7V 5.5 V VSON-CLIP Surface Mount 8 Dual Base Enhancement Power MOSFET 8 W - - 60 ns 4.6 x 3.6 x 1mm 60 ns - NexFET 1mm 3.6mm 4.6mm 0.24V +125 °C -40 °C 2 -
Texas Instruments CSD13303W1015 N-channel MOSFET, 3.5 A, 12 V NexFET, 6-Pin DSBGA Texas Instruments N 3.5 A 12 V 23 mΩ 1.2V 0.65V ±8 V DSBGA Surface Mount 6 Single Enhancement Power MOSFET 1.65 W 550 pF @ 6 V 3.9 nC @ 4.5 V 14.7 ns 1.5 x 1 x 0.38mm 4.6 ns - NexFET 0.38mm 1mm 1.5mm - +150 °C -55 °C 1 Si
Texas Instruments CSD13306WT N-channel MOSFET, 3.5 A, 12 V NexFET, 6-Pin DSBGA Texas Instruments N 3.5 A 12 V 15.5 mΩ - - ±10 V DSBGA Surface Mount 6 Single Enhancement Power MOSFET 1.9 W 1050 pF @ 6 V 8.6 nC @ 0 V 20 ns 1 x 1.49 x 0.28mm 7 ns 15s NexFET 0.28mm 1.49mm 1mm 1V +150 °C -55 °C 1 Si
Texas Instruments CSD13381F4T N-channel MOSFET, 2.1 A, 12 V FemtoFET, 3-Pin PICOSTAR Texas Instruments N 2.1 A 12 V 400 mΩ 1.1V 0.65V 8 V PICOSTAR Surface Mount 3 Single Enhancement Small Signal 500 mW 155 pF @ 6 V 1.06 nC @ 4.5 V 11 ns 1.04 x 0.64 x 0.35mm 3.7 ns - FemtoFET 0.35mm 0.64mm 1.04mm - +150 °C -55 °C 1 Si
Texas Instruments CSD13383F4T N-channel MOSFET, 2.9 A, 12 V FemtoFET, 3-Pin PICOSTAR Texas Instruments N 2.9 A 12 V 65 mΩ - - ±10 V PICOSTAR Surface Mount 3 Single Enhancement Power MOSFET 500 mW 224 pF @ 6 V 2 nC @ 0 V 96 ns 0.64 x 1.04 x 0.35mm 39 ns 5.4s FemtoFET 0.35mm 1.04mm 0.64mm 1V +150 °C -55 °C 1 Si
Texas Instruments CSD16301Q2 N-channel MOSFET, 5 A, 25 V NexFET, 6-Pin SON Texas Instruments N 5 A 25 V 34 mΩ 1.55V 0.9V +10/-8 V SON Surface Mount 6 Single Enhancement Power MOSFET 2.3 W 260 pF @ 12.5 V 2 nC @ 4.5 V 4.1 ns 2 x 2 x 0.8mm 2.7 ns - NexFET 0.8mm 2mm 2mm - +150 °C -55 °C 1 Si
Texas Instruments CSD16321Q5 N-channel MOSFET, 100 A, 25 V NexFET, 8-Pin SON Texas Instruments N 100 A 25 V 3.8 mΩ 1.4V 0.9V +10/-8 V SON Surface Mount 8 Single Enhancement Power MOSFET 3.1 W 2360 pF @ 12.5 V 14 nC @ 4.5 V 27 ns 6.1 x 5.1 x 1.05mm 9 ns - NexFET 1.05mm 5.1mm 6.1mm - +150 °C -55 °C 1 Si
Texas Instruments CSD16322Q5 N-channel MOSFET, 97 A, 25 V NexFET, 8-Pin SON Texas Instruments N 97 A 25 V 7.2 mΩ 1.4V 0.9V +10/-8 V SON Surface Mount 8 Single Enhancement Power MOSFET 3.1 W 1050 pF @ 12.5 V 6.8 nC @ 4.5 V 12.3 ns 6.1 x 5.1 x 1.05mm 6.1 ns - NexFET 1.05mm 5.1mm 6.1mm - +150 °C -55 °C 1 Si
Texas Instruments CSD16322Q5C N-channel MOSFET, 21 A, 25 V NexFET, 8-Pin SON Texas Instruments N 21 A 25 V 7.2 mΩ 1.4V 0.9V +10/-8 V SON Surface Mount 8 Single Enhancement Power MOSFET 3.1 W 1050 pF @ 12.5 V 6.8 nC @ 4.5 V 12.3 ns 6.1 x 5.1 x 1.05mm 6.1 ns - NexFET 1.05mm 5.1mm 6.1mm - +150 °C -55 °C 1 Si
Texas Instruments CSD16323Q3 N-channel MOSFET, 60 A, 25 V NexFET, 8-Pin SON Texas Instruments N 60 A 25 V 7.2 mΩ 1.4V 0.9V +10/-8 V SON Surface Mount 8 Single Enhancement Power MOSFET 3 W 1020 pF @ 12.5 V 6.2 nC @ 4.5 V 13 ns 3.4 x 3.4 x 1.1mm 5.3 ns - NexFET 1.1mm 3.4mm 3.4mm - +150 °C -55 °C 1 Si
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