MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
FemtoFET MOSFET P-Ch 2.5A 20V Case 0402 Texas Instruments - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
FentoFET N-chan MOSFET 30V 3A Picostar3 Texas Instruments N 3 A 30 V 270 mΩ - - -12 V, +12 V PICOSTAR Surface Mount 3 Single Enhancement Power MOSFET 500 mW 150 pF @ 15 V 1570 nC @ 0 V 11 ns 1.04 x 0.64 x 0.2mm 3 ns 4s FemtoFET 0.2mm 0.64mm 1.04mm 0.9V +150 °C 1 -55 °C Si
FentoFET P-ch MOSFET 20V 2.5A Picostar3 Texas Instruments P 2.5 A 20 V 825 mΩ - - - PICOSTAR Surface Mount 3 Single Enhancement Power MOSFET 500 mW 175 pF @ -10 V 1090 nC @ 10 V 18 ns 1.04 x 0.64 x 0.2mm 9.5 ns 3.5s FemtoFET 0.2mm 0.64mm 1.04mm 0.75V +150 °C 1 -55 °C Si
MOSFET N-Channel 100V 105A NexFET TO-220 Texas Instruments N 110 A 100 V 8.8 mΩ 3.3V 2.2V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 214 W 2980 pF @ 50 V 38 nC @ 10 V 16 ns 10.67 x 4.7 x 16.51mm 8.4 ns - NexFET 16.51mm 4.7mm 10.67mm - +175 °C 1 -55 °C Si
MOSFET N-Channel 60V 54A NexFET TO-220 Texas Instruments N 54 A 60 V 18 mΩ 3.5V 2.6V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 79 W 1140 pF @ 30 V 14 nC @ 10 V 12.6 ns 10.67 x 4.7 x 16.51mm 4.5 ns - NexFET 16.51mm 4.7mm 10.67mm - +150 °C 1 -55 °C Si
NexFET Dual N-chan MOSFET 20V 5A WSON6 Texas Instruments N 5 A 20 V 99 mΩ - - -10 V, +10 V WSON Surface Mount 6 Single Enhancement Power MOSFET 2.3 W 361 pF @ 10 V 4.2 nC @ 10 V 14 ns 2.1 x 2.1 x 0.75mm 6 ns 20s NexFET 0.75mm 2.1mm 2.1mm 1V +150 °C 1 -55 °C Si
NexFET Dual N-channel MOSFET 12V 8A LGA6 Texas Instruments N 8 A 12 V 23 mΩ - - -10 V, +10 V PICOSTAR Surface Mount 6 Single Enhancement Power MOSFET 2.3 W 902 pF 8.4 nC @ 4.5 V 711 ns 1.15 x 2.2 x 0.2mm 205 ns 36s NexFET 0.2mm 2.2mm 1.15mm - +150 °C 1 -55 °C Si
NexFET N-channel MOSFET 100V 140A D2PAK Texas Instruments N 200 A 100 V 4.1 mΩ - - -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 300 W 6100 pF @ 50 V 75 nC @ 0 V 21 ns 10.67 x 9.65 x 4.83mm 9 ns 301s NexFET 4.83mm 9.65mm 10.67mm 1.1V +175 °C 1 -55 °C Si
NexFET P-channel MOSFET 8V 3A DSBGA6 Texas Instruments P 3 A 8 V 53 mΩ - - -6 V DSBGA Surface Mount 6 Single Enhancement Power MOSFET 750 mW 703 pF @ -4 V 4.9 nC @ 4 V 58 ns 1 x 1.49 x 0.28mm 14 ns 14s NexFET 0.28mm 1.49mm 1mm 1V +150 °C 1 -55 °C Si
Texas Instruments CSD13381F4T N-channel MOSFET, 2.1 A, 12 V FemtoFET, 3-Pin PICOSTAR Texas Instruments N 2.1 A 12 V 400 mΩ 1.1V 0.65V +8 V PICOSTAR Surface Mount 3 Single Enhancement Small Signal 500 mW 155 pF @ 6 V 1.06 nC @ 4.5 V 11 ns 1.04 x 0.64 x 0.35mm 3.7 ns - FemtoFET 0.35mm 0.64mm 1.04mm - +150 °C 1 -55 °C Si
Texas Instruments CSD13383F4T N-channel MOSFET, 2.9 A, 12 V FemtoFET, 3-Pin PICOSTAR Texas Instruments N 2.9 A 12 V 65 mΩ - - -10 V, +10 V PICOSTAR Surface Mount 3 Single Enhancement Power MOSFET 500 mW 224 pF @ 6 V 2 nC @ 0 V 96 ns 0.64 x 1.04 x 0.35mm 39 ns 5.4s FemtoFET 0.35mm 1.04mm 0.64mm 1V +150 °C 1 -55 °C Si
Texas Instruments CSD17483F4T N-channel MOSFET, 1.5 A, 30 V FemtoFET, 3-Pin PICOSTAR Texas Instruments N 1.5 A 30 V 550 mΩ 1.1V 0.65V -12 V, +12 V PICOSTAR Surface Mount 3 Single Enhancement Small Signal 500 mW 145 pF @ 15 V 1.01 nC @ 4.5 V 10.6 ns 1.04 x 0.64 x 0.35mm 3.3 ns - FemtoFET 0.35mm 0.64mm 1.04mm - +150 °C 1 -55 °C Si
Texas Instruments CSD17577Q3AT N-channel MOSFET, 19 A, 30 V NexFET, 8-Pin VSCONP Texas Instruments N 19 A 30 V 6.4 mΩ - - -20 V, +20 V VSCONP Surface Mount 8 Single Enhancement Power MOSFET 2.8 W 1780 pF @ 15 V 13 nC @ 4.5 V 20 ns 3.5 x 3.5 x 0.9mm 4 ns 76s NexFET 0.9mm 3.5mm 3.5mm 1V +150 °C 1 -55 °C Si
Texas Instruments CSD17579Q3AT N-channel MOSFET, 11 A, 30 V NexFET, 8-Pin VSCONP Texas Instruments N 11 A 30 V 14.2 mΩ - - -20 V, +20 V VSCONP Surface Mount 8 Single Enhancement Power MOSFET 3.2 W 768 pF @ 15 V 5.3 nC @ 4.5 V 11 ns 3.5 x 3.5 x 0.9mm 2 ns 37s NexFET 0.9mm 3.5mm 3.5mm 1V +150 °C 1 -55 °C Si
Texas Instruments CSD19534KCS N-channel MOSFET, 100 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N 100 A 100 V 20 mΩ - - -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 118 W 1290 pF @ 50 V 17.1 nC @ 0 V 9 ns 10.67 x 4.7 x 16.51mm 6 ns 80s NexFET 16.51mm 4.7mm 10.67mm 1.1V +175 °C 1 -55 °C Si
Texas Instruments CSD19535KCS N-channel MOSFET, 187 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N 187 A 100 V 4.4 mΩ 3.4V 2.2V -20 V, +20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 300 W 6100 pF @ 50 V 78 nC @ 10 V 60 ns 10.67 x 4.7 x 16.51mm 32 ns - NexFET 16.51mm 4.7mm 10.67mm - +175 °C 1 -55 °C Si
Texas Instruments CSD22204WT P-channel MOSFET, 5 A, 8 V NexFET, 9-Pin DSBGA Texas Instruments P 5 A 8 V 14 mΩ - - -6 V DSBGA Surface Mount 9 Single Enhancement Power MOSFET 1.7 W 870 pF @ -4 V 18.9 nC @ 4 V 3450 ns 1.5 x 1.5 x 0.35mm 58 ns 18s NexFET 0.35mm 1.5mm 1.5mm 1V +150 °C 1 -55 °C Si
Texas Instruments CSD25483F4T P-channel MOSFET, 1.6 A, 20 V FemtoFET, 3-Pin PICOSTAR Texas Instruments P 1.6 A 20 V 1.07 Ω 1.2V 0.7V - PICOSTAR Surface Mount 3 Single Enhancement Small Signal 500 mW 198 pF @ -10 V 0.959 nC @ 4.5 V 17.4 ns 1.04 x 0.64 x 0.35mm 4.3 ns - FemtoFET 0.35mm 0.64mm 1.04mm - +150 °C 1 -55 °C Si
Texas Instruments TPS1101D P-channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments P 2.3 A 15 V 90 mΩ 1.5V 1V -15 V, +2 V SOIC Surface Mount 8 Single Enhancement Small Signal 791 mW - 11.25 nC @ 10 V 19 ns 4.9 x 3.91 x 1.58mm 6.5 ns - - 1.58mm 3.91mm 4.9mm - +125 °C 1 -40 °C Si
Texas Instruments CSD18504Q5A N-channel MOSFET, 75 A, 40 V NexFET, 8-Pin SON Texas Instruments N 75 A 40 V 9.8 mΩ 2.4V 1.5V -20 V, +20 V SON Surface Mount 8 Single Enhancement Power MOSFET 3.1 W 1380 pF @ 20 V 7.7 nC @ 4.5 V 12 ns 5.8 x 5 x 1.1mm 3.2 ns - NexFET 1.1mm 5mm 5.8mm - +150 °C 1 -55 °C Si
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