MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Length Height Dimensions Number of Elements per Chip Typical Turn-On Delay Time Typical Turn-Off Delay Time Forward Diode Voltage Series Width Minimum Operating Temperature Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Maximum Operating Temperature Transistor Material Forward Transconductance
Texas Instruments BQ500101DPCT Dual P-channel MOSFET, 10 A, 30 V NexFET, 8-Pin VSON-CLIP Texas Instruments P new products only 10 A 30 V - - 3.7V 5.5 V VSON-CLIP Surface Mount 8 Dual Base Enhancement Power MOSFET 8 W 4.6mm 1mm 4.6 x 3.6 x 1mm 2 60 ns 60 ns 0.24V NexFET 3.6mm -40 °C - - +125 °C - -
Texas Instruments CSD17308Q3T N-channel MOSFET, 50 A, 30 V NexFET, 8-Pin VSON-CLIP Texas Instruments N new products only 50 A 30 V 16.5 mΩ 1.8V 0.9V +10 V, -8 V VSON-CLIP Surface Mount 8 Single Enhancement Power MOSFET 28 W 3.4mm 1.1mm 3.4 x 3.4 x 1.1mm 1 4.5 ns 9.9 ns 1V NexFET 3.4mm -55 °C 540 pF @ 15 V 7.4 nC +150 °C - 37s
Texas Instruments CSD18535KTTT N-channel MOSFET, 279 A, 60 V NexFET, 3 + Tab-Pin D2PAK Texas Instruments N new products only 279 A 60 V 2.9 mΩ 2.4V 1.4V ±20 V D2PAK Surface Mount 3 + Tab Single Enhancement Power MOSFET 300 W 10.67mm 4.83mm 10.67 x 11.33 x 4.83mm 1 9 ns 19 ns 1V NexFET 11.33mm -55 °C 5090 pF @ 30 V 140 nC +175 °C - 263s
Texas Instruments CSD18536KTTT N-channel MOSFET, 349 A, 60 V NexFET, 3 + Tab-Pin D2PAK Texas Instruments N new products only 349 A 60 V 2.2 mΩ 2.2V 1.4V ±20 V D2PAK Surface Mount 3 + Tab Single Enhancement Power MOSFET 375 W 10.67mm 4.83mm 10.67 x 11.33 x 4.83mm 1 11 ns 24 ns 1V NexFET 11.33mm -55 °C 8790 pF @ 30 V 230 nC +175 °C - 312s
Texas Instruments CSD19502Q5BT N-channel MOSFET, 157 A, 80 V NexFET, 8-Pin VSON-CLIP Texas Instruments N new products only 157 A 80 V 4.8 mΩ 3.3V 2.2V ±20 V VSON-CLIP Surface Mount 8 Single Enhancement Power MOSFET 195 W 6.1mm 1.05mm 6.1 x 5.1 x 1.05mm 1 8 ns 22 ns 1V NexFET 5.1mm -55 °C 3750 pF @ 40 V 130 nC +150 °C - 88s
Texas Instruments CSD19537Q3T N-channel MOSFET, 53 A, 100 V NexFET, 8-Pin VSON-CLIP Texas Instruments N new products only 53 A 100 V 16.6 mΩ 3.6V 2.6V ±20 V VSON-CLIP Surface Mount 8 Single Enhancement Power MOSFET 83 W 3.4mm 1.1mm 3.4 x 3.4 x 1.1mm 1 5 ns 10 ns 1V NexFET 3.4mm -55 °C 1290 pF @ 50 V 44 nC +150 °C - 45s
Texas Instruments CSD25404Q3T P-channel MOSFET, 104 A, 20 V NexFET, 8-Pin VSON-CLIP Texas Instruments P new products only 104 A 20 V 150 mΩ 1.15V 0.65V ±12 V VSON-CLIP Surface Mount 8 Single Enhancement Power MOSFET 96 W 3.4mm 1.1mm 3.4 x 3.4 x 1.1mm 1 13 ns 35 ns 1V NexFET 3.4mm -55 °C 1630 pF @ -10 V 10.8 nC +150 °C - 47s
Texas Instruments CSD87334Q3DT Dual P-channel MOSFET, 60 A, 30 V NexFET, 8-Pin VSON Texas Instruments P new products only 60 A 30 V 8.3 mΩ 1.2V 0.75V +10 V, -8 V VSON Surface Mount 8 Dual Base Enhancement Power MOSFET 6 W 3.4mm 1.05mm 3.4 x 3.4 x 1.05mm 2 4 ns 11 ns 1V NexFET 3.4mm -55 °C 971 pF @ 15 V 10.5 nC +150 °C - 62s
Texas Instruments CSD87335Q3DT Dual P-channel MOSFET, 70 A, 30 V NexFET, 8-Pin LSON-CLIP Texas Instruments P new products only 70 A 30 V - 1.2V 0.75V -8 V, +10 V LSON-CLIP Surface Mount 8 Dual Base Enhancement Power MOSFET 6 W 3.4mm 1.5mm 3.4 x 3.4 x 1.5mm 2 8 ns 13 ns, 17 ns 1V NexFET 3.4mm -55 °C 1620 pF @ 15 V, 805 pF @ 15 V 11 nC, 19 nC +150 °C - 107s
Texas Instruments CSD87355Q5DT Dual P-channel MOSFET, 120 A, 30 V NexFET, 8-Pin LSON-CLIP Texas Instruments P new products only 120 A 30 V - 1.2V 0.75V +10 V, -8 V LSON-CLIP Surface Mount 8 Dual Base Enhancement Power MOSFET 12 W 6.1mm 1.5mm 6.1 x 5.1 x 1.5mm 2 8 ns, 10 ns 13 ns, 27 ns 1V NexFET 5.1mm -55 °C 1430 pF @ 15 V, 3570 pF @ 15 V 18 nC, 40 nC +125 °C - 151s
Texas Instruments CSD18504Q5A N-channel MOSFET, 75 A, 40 V NexFET, 8-Pin SON Texas Instruments N - 75 A 40 V 9.8 mΩ 2.4V 1.5V ±20 V SON Surface Mount 8 Single Enhancement Power MOSFET 3.1 W 5.8mm 1.1mm 5.8 x 5 x 1.1mm 1 3.2 ns 12 ns - NexFET 5mm -55 °C 1380 pF @ 20 V 7.7 nC @ 4.5 V +150 °C Si -
Texas Instruments CSD18532KCS N-channel MOSFET, 169 A, 60 V NexFET, 3-Pin TO-220 Texas Instruments N - 169 A 60 V 5.3 mΩ 2.2V 1.5V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 250 W 10.67mm 16.51mm 10.67 x 4.7 x 16.51mm 1 7.8 ns 24.2 ns - NexFET 4.7mm -55 °C 3900 pF @ 30 V 21 nC @ 4.5 V +175 °C Si -
Texas Instruments CSD19506KCS N-channel MOSFET, 273 A, 80 V NexFET, 3-Pin TO-220 Texas Instruments N - 273 A 80 V 2.8 mΩ 3.2V 2.1V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 375 W 10.67mm 16.51mm 10.67 x 4.7 x 16.51mm 1 19 ns 30 ns - NexFET 4.7mm -55 °C 9380 pF @ 40 V 120 nC @ 10 V +175 °C Si -
Texas Instruments CSD18563Q5AT N-channel MOSFET, 100 A, 60 V NexFET, 8-Pin VSON-FET Texas Instruments N - 100 A 60 V 10.8 mΩ 2.4V 1.7V ±20 V VSON-FET Surface Mount 8 Single Enhancement Power MOSFET 3.2 W 5.8mm 1.1mm 5.8 x 5 x 1.1mm 1 3.2 ns 11.4 ns - NexFET 5mm -55 °C 1150 pF @ 30 V 15 nC @ 10 V 150 °C Si -
Texas Instruments CSD19536KCS N-channel MOSFET, 259 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N - 259 A 100 V 3.2 mΩ 3.2V 2.1V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 375 W 10.67mm 16.51mm 10.67 x 4.7 x 16.51mm 1 14 ns 38 ns - NexFET 4.7mm -55 °C 9250 pF @ 50 V 118 nC @ 10 V +175 °C Si -
Texas Instruments CSD19534KCS N-channel MOSFET, 100 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N - 100 A 100 V 20 mΩ - - ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 118 W 10.67mm 16.51mm 10.67 x 4.7 x 16.51mm 1 6 ns 9 ns 1.1V NexFET 4.7mm -55 °C 1290 pF @ 50 V 17.1 nC @ 0 V +175 °C Si 80s
Texas Instruments CSD18533KCS N-channel MOSFET, 118 A, 60 V NexFET, 3-Pin TO-220 Texas Instruments N - 118 A 60 V 9 mΩ 2.3V 1.5V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 192 W 10.67mm 16.51mm 10.67 x 4.7 x 16.51mm 1 5.7 ns 13 ns - NexFET 4.7mm -55 °C 2420 pF @ 30 V 14 nC @ 4.5 V +175 °C Si -
Texas Instruments CSD19531KCS N-channel MOSFET, 110 A, 100 V NexFET, 3-Pin TO-220 Texas Instruments N - 110 A 100 V 8.8 mΩ 3.3V 2.2V ±20 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 214 W 10.67mm 16.51mm 10.67 x 4.7 x 16.51mm 1 8.4 ns 16 ns - NexFET 4.7mm -55 °C 2980 pF @ 50 V 38 nC @ 10 V +175 °C Si -
Texas Instruments CSD18533Q5A N-channel MOSFET, 100 A, 60 V NexFET, 8-Pin SON Texas Instruments N - 100 A 60 V 8.5 mΩ 2.3V 1.5V ±20 V SON Surface Mount 8 Single Enhancement Power MOSFET 3.2 W 5.8mm 1.1mm 5.8 x 5 x 1.1mm 1 5.2 ns 15 ns - NexFET 5mm -55 °C 2200 pF @ 30 V 14 nC @ 4.5 V +150 °C Si -
Texas Instruments TPS1101D P-channel MOSFET, 2.3 A, 15 V, 8-Pin SOIC Texas Instruments P - 2.3 A 15 V 90 mΩ 1.5V 1V -15 V, 2 V SOIC Surface Mount 8 Single Enhancement Small Signal 0.791 W 4.9mm 1.58mm 4.9 x 3.91 x 1.58mm 1 6.5 ns 19 ns - - 3.91mm -40 °C - 11.25 nC @ 10 V +125 °C Si -
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