MOSFET Transistors

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Part Details Brand Recently Introduced Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Turn-On Delay Time Typical Turn-Off Delay Time Typical Gate Charge @ Vgs Typical Input Capacitance @ Vds Minimum Operating Temperature Length Series Width Forward Transconductance Transistor Material Number of Elements per Chip Dimensions Forward Diode Voltage Height Maximum Operating Temperature
Vishay SIHH26N60E-T1-GE3 N-channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK Vishay new products only N 25 A 600 V 135 mΩ 4V 2V ±30 V PowerPAK Surface Mount 4 Single Enhancement Power MOSFET 202 W 28 ns 80 ns 77 nC 2815 pF -55 °C 8.1mm E 8.1mm 8.6s Si 1 8.1 x 8.1 x 1mm 1.2V 1mm +150 °C
Vishay SUM70040E-GE3 N-channel MOSFET, 120 A, 100 V, 3-Pin TO-263 Vishay new products only N 120 A 100 V 4.6 mΩ 4V 2.5V ±20 V TO-263 Surface Mount 3 Single Enhancement Power MOSFET 375 W 15 ns 55 ns 76 nC 5100 pF -55 °C 9.65mm - 10.41mm 82s Si 1 9.65 x 10.41 x 4.82mm 1.5V 4.82mm +175 °C
Vishay SUP70040E-GE3 N-channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB Vishay new products only N 120 A 100 V 4.6 mΩ 4V 2.5V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 375 W 15 ns 55 ns 76 nC 5100 pF -55 °C 10.51mm - 4.65mm - Si 1 10.51 x 4.65 x 15.49mm 1.5V 15.49mm +175 °C
Vishay SiC530CD-T1-GE3 Dual N-channel MOSFET, 22-Pin PowerPAK MLP4535 Vishay new products only N - - - - - - PowerPAK MLP4535 Surface Mount 22 - Enhancement Power MOSFET - 20 ns 20 ns - - - 4.5mm - 3.5mm - Si 2 4.5 x 3.5 x 0.75mm - 0.75mm +150 °C
Vishay IRFD210PBF N-channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay - N 600 mA 200 V 1.5 Ω - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1 W 8.2 ns 14 ns 8.2 nC @ 10 V 140 pF @ 25 V -55 °C 5mm - 6.29mm - Si 1 5 x 6.29 x 3.37mm - 3.37mm +150 °C
Vishay SI4599DY-T1-GE3 Dual N/P-channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay - N, P 4.7 A, 6.8 A 40 V 42.5 mΩ, 62 mΩ - 1.2V ±20 V SOIC Surface Mount 8 Isolated Enhancement Power MOSFET 3 W, 3.1 W 16 (N) ns, 44 (P) ns 16 ns, 28 ns 11.7 nC @ 10 V (N-Channel), 25 nC @ -10 V (P-Channel) 640 pF@ 20 V, 970 pF@ -20 V -55 °C 5mm - 4mm - Si 2 5 x 4 x 1.55mm - 1.55mm +150 °C
Vishay SI7309DN-T1-E3 P-channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay - P 3.9 A 60 V 115 mΩ - 1V ±20 V PowerPAK 1212 Surface Mount 8 Single Enhancement Power MOSFET 3.2 W 10 ns, 25 ns 30 ns, 33 ns 14.5 nC @ 10 V 600 pF@ 30 V -65 °C 3.05mm - 3.05mm - Si 1 3.05 x 3.05 x 1.04mm - 1.04mm +150 °C
Vishay SI4840BDY-T1-GE3 N-channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay - N 10 A 40 V 9 mΩ - 1V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 1.56 W 15 ns 50 ns 18.5 nC @ 5 V - -55 °C 5mm - 4mm - Si 1 5 x 4 x 1.55mm - 1.55mm +150 °C
Vishay SI1471DH-T1-GE3 P-channel MOSFET, 2.8 A, 30 V, 6-Pin SC-70 Vishay - P 2.8 A 30 V 100 mΩ - 0.6V ±12 V SC-70 Surface Mount 6 Single Enhancement Power MOSFET 1.5 W 4 ns, 22 ns 20 ns, 23 ns 6.5 nC @ 4.5 V 445 pF@ 15 V -55 °C 2mm - 1.25mm - Si 1 2 x 1.25 x 1mm - 1mm +150 °C
Vishay IRFL014PBF N-channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223 Vishay - N 2.7 A 60 V 200 mΩ - 2V ±20 V SOT-223 Surface Mount 4 Single Enhancement Power MOSFET 2 W 10 ns 13 ns 11 nC @ 10 V 300 pF@ 25 V -55 °C 6.7mm - 3.7mm - Si 1 6.7 x 3.7 x 1.45mm - 1.45mm +150 °C
Vishay IRF510PBF N-channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay - N 5.6 A 100 V 540 mΩ - 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 43 W 6.9 ns 15 ns 8.3 nC @ 10 V 180 pF@ 25 V -55 °C 10.41mm - 4.7mm - Si 1 10.41 x 4.7 x 9.01mm - 9.01mm +175 °C
SI6966EDQ, Dual N-Channel MOSFET Transistor 4A 20V, 8-Pin TSSOP Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Vishay IRFR9220PBF P-channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay - P 3.6 A 200 V 1.5 Ω - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 8.8 ns 7.3 ns 20 nC @ 10 V 340 pF@ 25 V -55 °C 6.73mm - 6.22mm - Si 1 6.73 x 6.22 x 2.39mm - 2.39mm +150 °C
Vishay SI4190ADY-T1-GE3 N-channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay - N 18 A 100 V 2.2 Ω - 1.5V ±20 V SOIC Surface Mount 8 Single Enhancement - 6 W 15 ns 34 ns 44.4 nC @ 10 V 1970 pF @ 50 V -55 °C 5mm - 4mm - Si 1 5 x 4 x 1.5mm - 1.5mm +150 °C
Vishay IRFR110PBF N-channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay - N 4.3 A 100 V 540 mΩ - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 6.9 ns 15 ns 8.3 nC @ 10 V 180 pF@ 25 V -55 °C 6.73mm - 6.22mm - Si 1 6.73 x 6.22 x 2.39mm - 2.39mm +150 °C
Vishay SI2301CDS-T1-GE3 P-channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay - P 2.3 A 20 V 112 mΩ - 0.4V ±8 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 0.86 W 11 ns 30 ns 3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V 405 pF @ 10 V -55 °C 3.04mm - 1.4mm - Si 1 3.04 x 1.4 x 1.02mm - 1.02mm +150 °C
Vishay IRFU9310PBF P-channel MOSFET, 1.8 A, 400 V, 3-Pin IPAK Vishay - P 1.8 A 400 V 7 Ω - 2V ±20 V IPAK Through Hole 3 Single Enhancement Power MOSFET 50 W 11 ns 25 ns 13 nC @ 10 V 270 pF@ 25 V -55 °C 6.73mm - 2.38mm - Si 1 6.73 x 2.38 x 6.22mm - 6.22mm +150 °C
Vishay 2N7002K-T1-E3 N-channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Vishay - N 300 mA 60 V 2 Ω - 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement - 0.35 W 35 ns 35 ns 0.4 nC @ 4.5 V 30 pF @ 25 V -55 °C 3.04mm - 1.4mm - Si 1 3.04 x 1.4 x 1.02mm - 1.02mm +150 °C
Vishay SIR462DP-T1-GE3 N-channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO Vishay - N 19 A 30 V 8 mΩ - 1V ±20 V PowerPAK SO Surface Mount 8 Single Enhancement Power MOSFET 4.8 W 20 ns 25 ns 20 nC @ 10 V, 8.8 nC @ 4.5 V 1155 pF@ 15 V -55 °C 4.9mm - 5.89mm - Si 1 4.9 x 5.89 x 1.04mm - 1.04mm +150 °C
Vishay IRF540 N-channel MOSFET, 28 A, 100 V, 3-Pin TO-220AB Vishay - N 28 A 100 V 77 mΩ - 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 150 W 11 ns 53 ns 72 nC @ 10 V 1700 pF@ 25 V -55 °C 10.41mm - 4.7mm - Si 1 10.41 x 4.7 x 9.01mm - 9.01mm +175 °C
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