MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
AQ101 Dual N-chan MOSFET 60V 5.4A SOIC8 Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
N-channel MOSFET 500V 2.4A 3 Ohm TO-251 Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
P-channel MOSFET 20V 4A 47mOhm TSOP6 Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Vishay IRF830ASPBF N-channel MOSFET, 5 A, 500 V, 3-Pin D2PAK Vishay N - 5 A 500 V 1.4 Ω - 2V -30 V, +30 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 3.1 W 620 pF@ 25 V 24 nC @ 10 V 21 ns 10.67 x 9.65 x 4.83mm 10 ns - - 4.83mm 9.65mm 10.67mm - +150 °C 1 -55 °C Si
Vishay IRF9510SPBF P-channel MOSFET, 4 A, 100 V, 3-Pin D2PAK Vishay P - 4 A 100 V 1.2 Ω - 2V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 3.7 W 200 pF@ 25 V 8.7 nC @ 10 V 15 ns 10.41 x 9.65 x 4.83mm 10 ns - - 4.83mm 9.65mm 10.41mm - +175 °C 1 -55 °C Si
Vishay IRF9530SPBF P-channel MOSFET, 12 A, 100 V, 3-Pin D2PAK Vishay P - 12 A 100 V 300 mΩ - 2V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 3.7 W 860 pF@ 25 V 38 nC @ 10 V 31 ns 10.67 x 9.02 x 4.83mm 12 ns - - 4.83mm 9.02mm 10.67mm - +175 °C 1 -55 °C Si
Vishay IRF9540SPBF P-channel MOSFET, 19 A, 100 V, 3-Pin D2PAK Vishay P - 19 A 100 V 200 mΩ - 2V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 150 W 1400 pF @ 25 V 61 nC @ 10 V 34 ns 10.67 x 9.65 x 4.83mm 16 ns - - 4.83mm 9.65mm 10.67mm - +175 °C 1 -55 °C Si
Vishay IRF9Z10PBF P-channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay P - 4.7 A 60 V 500 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 43 W 270 pF @ -25 V 12 nC @ 10 V 10 ns 10.51 x 4.65 x 15.49mm 11 ns - - 15.49mm 4.65mm 10.51mm - +175 °C 1 -55 °C Si
Vishay IRF9Z20PBF P-channel MOSFET, 6.1 A, 50 V, 3-Pin TO-220AB Vishay P - 6.1 A 50 V 280 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 40 W 480 pF @ -25 V 17 nC @ 10 V 12 ns 10.51 x 4.65 x 15.49mm 8.2 ns - - 15.49mm 4.65mm 10.51mm - +150 °C 1 -55 °C Si
Vishay IRF9Z34PBF P-channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB Vishay P - 18 A 60 V 140 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 88 W 1100 pF@ 25 V 34 nC @ 10 V 20 ns 10.41 x 4.7 x 9.01mm 18 ns - - 9.01mm 4.7mm 10.41mm - +175 °C 1 -55 °C Si
Vishay IRFBC30APBF N-channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB Vishay N - 3.6 A 600 V 2.2 Ω - 2V -30 V, +30 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 74 W 510 pF@ 25 V 23 nC @ 10 V 19 ns 10.41 x 4.7 x 9.01mm 9.8 ns - - 9.01mm 4.7mm 10.41mm - +150 °C 1 -55 °C Si
Vishay IRFD320PBF N-channel MOSFET, 490 mA, 400 V, 4-Pin HVMDIP Vishay N - 490 mA 400 V 1.8 Ω - 2V -20 V, +20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1 W 410 pF @ 25 V 20 nC @ 10 V 30 ns 5 x 6.29 x 3.37mm 10 ns - - 3.37mm 6.29mm 5mm - +150 °C 1 -55 °C Si
Vishay IRFD9010PBF P-channel MOSFET, 1.1 A, 60 V, 4-Pin HVMDIP Vishay P - 1.1 A 60 V - - 2V - HVMDIP Surface Mount 4 Single Enhancement - - - - - 6.9 x 3.8 x 3.8mm - - - 3.8mm 3.8mm 6.9mm - +175 °C 1 -55 °C Si
Vishay IRFD9020PBF P-channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay P - 1.6 A 60 V 280 mΩ - 2V -20 V, +20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1.3 W 570 pF @ -25 V 19 nC @ 10 V 15 ns 6.29 x 5 x 3.37mm 13 ns 1.3s - 3.37mm 5mm 6.29mm 6.3V +175 °C 1 -55 °C Si
Vishay IRFI510GPBF N-channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP Vishay N - 4.5 A 100 V 540 mΩ - 2V -20 V, +20 V TO-220FP Through Hole 3 Single Enhancement Power MOSFET 27 W 180 pF @ 25 V 8.3 nC @ 10 V 15 ns 10.63 x 4.83 x 16.12mm 6.9 ns - - 16.12mm 4.83mm 10.63mm - +175 °C 1 -55 °C Si
Vishay IRFI520GPBF N-channel MOSFET, 7.2 A, 100 V, 3-Pin TO-220FP Vishay N - 7.2 A 100 V 270 mΩ - 2V -20 V, +20 V TO-220FP Through Hole 3 Single Enhancement Power MOSFET 37 W 360 pF @ 25 V 16 nC @ 10 V 19 ns 10.63 x 4.83 x 16.12mm 8.8 ns - - 16.12mm 4.83mm 10.63mm - +175 °C 1 -55 °C Si
Vishay IRFI620GPBF N-channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP Vishay N - 4 A 200 V 1 Ω - 2V -10 V, +10 V TO-220FP Through Hole 3 Single Enhancement Power MOSFET 30 W 360 pF@ 25 V 16 nC @ 10 V 18 ns - 4.2 ns - - - - - - +150 °C 1 -55 °C Si
Vishay IRFI820GPBF N-channel MOSFET, 2.1 A, 500 V, 3-Pin TO-220FP Vishay N - 2.1 A 500 V 3 Ω - 2V -20 V, +20 V TO-220FP Through Hole 3 Single Enhancement Power MOSFET 30 W 360 pF @ 25 V 24 nC @ 10 V 33 ns - 8 ns - - 9.8mm - - - +150 °C 1 -55 °C Si
Vishay IRFI9620GPBF P-channel MOSFET, 1.9 A, 200 V, 3-Pin TO-220FP Vishay P - 1.9 A 200 V 1.5 Ω - 2V -20 V, +20 V TO-220FP Through Hole 3 Single Enhancement Power MOSFET 30 W 340 pF @ -15 15 nC @ 10 V 7.3 ns 10.63 x 4.83 x 16.12mm 8.8 ns - - 16.12mm 4.83mm 10.63mm - +150 °C 1 -55 °C Si
Vishay IRFI9634GPBF P-channel MOSFET, 4.1 A, 250 V, 3-Pin TO-220FP Vishay P - 4.1 A 250 V 1 Ω - 2V -20 V, +20 V TO-220FP Through Hole 3 Single Enhancement Power MOSFET 35 W 680 pF @ 25 V 38 nC @ 10 V 34 ns - 12 ns - - 9.8mm - - - +150 °C 1 -55 °C Si
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