MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Height Dimensions Series Width Number of Elements per Chip Length Forward Diode Voltage Typical Turn-On Delay Time Typical Turn-Off Delay Time Transistor Material Forward Transconductance Maximum Operating Temperature Minimum Operating Temperature Typical Gate Charge @ Vgs Typical Input Capacitance @ Vds
Vishay SI4599DY-T1-GE3 Dual N/P-channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay N, P 4.7 A, 6.8 A 40 V 42.5 mΩ, 62 mΩ - 1.2V ±20 V SOIC Surface Mount 8 Isolated Enhancement Power MOSFET 3 W, 3.1 W 1.55mm 5 x 4 x 1.55mm - 4mm 2 5mm - 16 (N) ns, 44 (P) ns 16 ns, 28 ns Si - +150 °C -55 °C 11.7 nC @ 10 V, 25 nC @ 10 V 640 pF@ 20 V, 970 pF@ -20 V
Vishay SI7309DN-T1-E3 P-channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212 Vishay P 3.9 A 60 V 115 mΩ - 1V ±20 V PowerPAK 1212 Surface Mount 8 Single Enhancement Power MOSFET 3.2 W 1.04mm 3.05 x 3.05 x 1.04mm - 3.05mm 1 3.05mm - 10 ns, 25 ns 30 ns, 33 ns Si - +150 °C -65 °C 14.5 nC @ 10 V 600 pF@ 30 V
Vishay IRFD210PBF N-channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP Vishay N 600 mA 200 V 1.5 Ω - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1 W 3.37mm 5 x 6.29 x 3.37mm - 6.29mm 1 5mm - 8.2 ns 14 ns Si - +150 °C -55 °C 8.2 nC @ 10 V 140 pF @ 25 V
Vishay SI4840BDY-T1-GE3 N-channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay N 10 A 40 V 9 mΩ - 1V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 1.56 W 1.55mm 5 x 4 x 1.55mm - 4mm 1 5mm - 15 ns 50 ns Si - +150 °C -55 °C 18.5 nC @ 5 V -
Vishay SI1471DH-T1-GE3 P-channel MOSFET, 2.8 A, 30 V, 6-Pin SC-70 Vishay P 2.8 A 30 V 100 mΩ - 0.6V ±12 V SC-70 Surface Mount 6 Single Enhancement Power MOSFET 1.5 W 1mm 2 x 1.25 x 1mm - 1.25mm 1 2mm - 4 ns, 22 ns 20 ns, 23 ns Si - +150 °C -55 °C 6.5 nC @ 4.5 V 445 pF@ 15 V
Vishay IRFL014PBF N-channel MOSFET, 2.7 A, 60 V, 4-Pin SOT-223 Vishay N 2.7 A 60 V 200 mΩ - 2V ±20 V SOT-223 Surface Mount 4 Single Enhancement Power MOSFET 2 W 1.45mm 6.7 x 3.7 x 1.45mm - 3.7mm 1 6.7mm - 10 ns 13 ns Si - +150 °C -55 °C 11 nC @ 10 V 300 pF@ 25 V
SI6966EDQ, Dual N-Channel MOSFET Transistor 4A 20V, 8-Pin TSSOP Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Vishay IRFR9220PBF P-channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK Vishay P 3.6 A 200 V 1.5 Ω - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 2.39mm 6.73 x 6.22 x 2.39mm - 6.22mm 1 6.73mm - 8.8 ns 7.3 ns Si - +150 °C -55 °C 20 nC @ 10 V 340 pF@ 25 V
Vishay IRFP460BPBF N-channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay N 20 A 500 V 250 mΩ - 2V ±20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 278 W 20.82mm 15.87 x 5.31 x 20.82mm D Series 5.31mm 1 15.87mm - 24 ns 117 ns Si - +150 °C -55 °C 85 nC @ 10 V 3094 pF@ 10 V
Vishay SI4190ADY-T1-GE3 N-channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay N 18 A 100 V 2.2 Ω - 1.5V ±20 V SOIC Surface Mount 8 Single Enhancement - 6 W 1.5mm 5 x 4 x 1.5mm - 4mm 1 5mm - 15 ns 34 ns Si - +150 °C -55 °C 44.4 nC @ 10 V 1970 pF @ 50 V
Vishay IRF510PBF N-channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay N 5.6 A 100 V 540 mΩ - 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 43 W 9.01mm 10.41 x 4.7 x 9.01mm - 4.7mm 1 10.41mm - 6.9 ns 15 ns Si - +175 °C -55 °C 8.3 nC @ 10 V 180 pF@ 25 V
Vishay IRFR110PBF N-channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay N 4.3 A 100 V 540 mΩ - 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 2.5 W 2.39mm 6.73 x 6.22 x 2.39mm - 6.22mm 1 6.73mm - 6.9 ns 15 ns Si - +150 °C -55 °C 8.3 nC @ 10 V 180 pF@ 25 V
Vishay IRFD110 N-channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay N 1 A 100 V 540 mΩ - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1.3 W 3.37mm 5 x 6.29 x 3.37mm - 6.29mm 1 5mm - 6.9 ns 15 ns Si - +175 °C -55 °C 8.3 nC @ 10 V 180 pF @ 25 V
Vishay IRFU9310PBF P-channel MOSFET, 1.8 A, 400 V, 3-Pin IPAK Vishay P 1.8 A 400 V 7 Ω - 2V ±20 V IPAK Through Hole 3 Single Enhancement Power MOSFET 50 W 6.22mm 6.73 x 2.38 x 6.22mm - 2.38mm 1 6.73mm - 11 ns 25 ns Si - +150 °C -55 °C 13 nC @ 10 V 270 pF@ 25 V
Vishay SIR462DP-T1-GE3 N-channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO Vishay N 19 A 30 V 8 mΩ - 1V ±20 V PowerPAK SO Surface Mount 8 Single Enhancement Power MOSFET 4.8 W 1.04mm 4.9 x 5.89 x 1.04mm - 5.89mm 1 4.9mm - 20 ns 25 ns Si - +150 °C -55 °C 20 nC @ 10 V, 8.8 nC @ 4.5 V 1155 pF@ 15 V
Vishay SI2301CDS-T1-GE3 P-channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay P 2.3 A 20 V 112 mΩ - 0.4V ±8 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 0.86 W 1.02mm 3.04 x 1.4 x 1.02mm - 1.4mm 1 3.04mm - 11 ns 30 ns Si - +150 °C -55 °C 3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V 405 pF @ 10 V
Vishay IRFD9120PBF P-channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay P 1 A 100 V 600 mΩ - 2V ±20 V HVMDIP Through Hole 4 Single Enhancement Power MOSFET 1.3 W 3.37mm 5 x 6.29 x 3.37mm - 6.29mm 1 5mm - 9.6 ns 21 ns Si - +175 °C -55 °C 18 nC @ 10 V 390 pF @ 25 V
Vishay SI2309CDS-T1-GE3 P-channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay P 1.2 A 60 V 345 mΩ - 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1 W 1.02mm 3.04 x 1.4 x 1.02mm - 1.4mm 1 3.04mm - 40 ns 15 ns Si - +150 °C -55 °C 2.7 nC @ 4.5 V 210 pF @ 30 V
Vishay SI4431CDY-T1-GE3 P-channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay P 7.2 A 30 V 49 mΩ - 1V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 4.2 W 1.55mm 5 x 4 x 1.55mm - 4mm 1 5mm - 38 ns 23 ns Si - +150 °C -55 °C 25 nC @ 10 V 1006 pF @ -15 V
Vishay IRF540 N-channel MOSFET, 28 A, 100 V, 3-Pin TO-220AB Vishay N 28 A 100 V 77 mΩ - 2V ±20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 150 W 9.01mm 10.41 x 4.7 x 9.01mm - 4.7mm 1 10.41mm - 11 ns 53 ns Si - +175 °C -55 °C 72 nC @ 10 V 1700 pF@ 25 V
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