MOSFET Transistors

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Part Details Brand Channel Type Recently Introduced Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Transistor Configuration Pin Count Channel Mode Category Maximum Power Dissipation Typical Gate Charge @ Vgs Typical Input Capacitance @ Vds Dimensions Minimum Operating Temperature Width Forward Diode Voltage Height Series Typical Turn-On Delay Time Typical Turn-Off Delay Time Number of Elements per Chip Maximum Operating Temperature Transistor Material Forward Transconductance Length
Vishay SUM50020E-GE3 N-channel MOSFET, 120 A, 60 V, 8-Pin TO-263 Vishay N new products only 120 A 60 V 2.6 mΩ 2.5V 1.2V ±20 V TO-263 Surface Mount Single 8 Enhancement Power MOSFET 375 W 126 nC @ 10 V 11113 pF @ 30 V 10.41 x 9.65 x 4.82mm -55 °C 9.65mm 1.5V 4.82mm - 15 ns 55 ns 1 +175 °C - 145s 10.41mm
Vishay SI3493DDV-T1-GE3 P-channel MOSFET, 8 A, 20 V, 6-Pin TSOP Vishay P new products only 8 A 20 V 51 mΩ 1V 0.4V ±8 V TSOP Surface Mount Single 6 Enhancement Power MOSFET 3.6 W 34.8 nC @ 8 V 1825 pF @ -10 V 3.1 x 1.7 x 1mm -55 °C 1.7mm 1.2V 1mm - 25 ns 95 ns 1 +150 °C - 30s 3.1mm
Vishay SI3493DDV-T1-GE3 P-channel MOSFET, 8 A, 20 V, 6-Pin TSOP Vishay P new products only 8 A 20 V 51 mΩ 1V 0.4V ±8 V TSOP Surface Mount Single 6 Enhancement Power MOSFET 3.6 W 34.8 nC @ -8 V 1825 pF @ -10 V 3.1 x 1.7 x 1mm -55 °C 1.7mm 1.2V 1mm - 25 ns 95 ns 1 +150 °C - 30s 3.1mm
Vishay SI5448DU-T1-GE3 N-channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay N new products only 25 A 40 V 9.47 mΩ 2.5V 1V +20 V PowerPAK ChipFET Surface Mount Single 8 Enhancement Power MOSFET 31 W 26.2 nC @ 10 V 1765 pF @ 20 V 3 x 1.9 x 0.8mm -55 °C 1.9mm 1.2V 0.8mm - 15 ns 18 ns 1 +150 °C - 80s 3mm
Vishay SI5448DU-T1-GE3 N-channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay N new products only 25 A 40 V 9.47 mΩ 2.5V 1V +20 V PowerPAK ChipFET Surface Mount Single 8 Enhancement Power MOSFET 31 W 26.2 nC @ 10 V 1765 pF @ 20 V 3 x 1.9 x 0.8mm -55 °C 1.9mm 1.2V 0.8mm - 15 ns 18 ns 1 +150 °C - - 3mm
Vishay SIHP065N60E-GE3 N-channel MOSFET, 40 A, 600 V, 3+Tab-Pin TO-220AB Vishay N new products only 40 A 600 V 65 mΩ 5V 3V ±30 V TO-220AB Through Hole Single 3+Tab Enhancement Power MOSFET 250 W 49 nC @ 10 V 2750 pF @ 100 V 10.51 x 4.65 x 15.49mm -55 °C 4.65mm 1.2V 15.49mm - 28 ns 54 ns 1 +150 °C - 12s 10.51mm
Vishay SIHP065N60E-GE3 N-channel MOSFET, 40 A, 600 V, 3+Tab-Pin TO-220AB Vishay N new products only 40 A 600 V 65 mΩ 5V 3V ±30 V TO-220AB Through Hole Single 3+Tab Enhancement Power MOSFET 250 W 49 nC @ 10 V 2750 pF @ 100 V 10.51 x 4.65 x 15.49mm -55 °C 4.65mm 1.2V 15.49mm - 28 ns 54 ns 1 +150 °C - - 10.51mm
Vishay SIR158DP-T1-RE3 N-channel MOSFET, 60 A, 30 V, 8-Pin SO Vishay N new products only 60 A 30 V 2.3 mΩ 2.5V 1.2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 83 W 87 nC @ 10 V 4980 pF @ 15 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 28 ns 47 ns 1 +150 °C - 100s 6.25mm
Vishay SIR158DP-T1-RE3 N-channel MOSFET, 60 A, 30 V, 8-Pin SO Vishay N new products only 60 A 30 V 2.3 mΩ 2.5V 1.2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 83 W 87 nC @ 10 V 4980 pF @ 15 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 28 ns 47 ns 1 +150 °C - - 6.25mm
Vishay SIR626DP-T1-RE3 N-channel MOSFET, 100 A, 60 V, 8-Pin SO Vishay N new products only 100 A 60 V 2.6 mΩ 3.4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 68 nC @ 10 V 5130 pF @ 30 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 19 ns 27 ns 1 +150 °C - 78S 6.25mm
Vishay SIR626DP-T1-RE3 N-channel MOSFET, 100 A, 60 V, 8-Pin SO Vishay N new products only 100 A 60 V 2.6 mΩ 3.4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 68 nC @ 10 V 5130 pF @ 30 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 19 ns 27 ns 1 +150 °C - - 6.25mm
Vishay SIR632DP-T1-RE3 N-channel MOSFET, 29 A, 150 V, 8-Pin SO Vishay N new products only 29 A 150 V 41 mΩ 4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 69.5 W 14 nC @ 10 V 740 pF @ 75 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 9 ns 10 ns 1 +150 °C - 18s 6.25mm
Vishay SIR632DP-T1-RE3 N-channel MOSFET, 29 A, 150 V, 8-Pin SO Vishay N new products only 29 A 150 V 41 mΩ 4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 69.5 W 14 nC @ 10 V 740 pF @ 75 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 9 ns 10 ns 1 +150 °C - - 6.25mm
Vishay SIR668DP-T1-RE3 N-channel MOSFET, 65 A, 100 V, 8-Pin SO Vishay N new products only 65 A 100 V 5.05 mΩ 3.4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 72 nC @ 10 V 5400 pF @ 50 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 22 ns 38 ns 1 +150 °C - 85s 6.25mm
Vishay SIR668DP-T1-RE3 N-channel MOSFET, 65 A, 100 V, 8-Pin SO Vishay N new products only 65 A 100 V 5.05 mΩ 3.4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 72 nC @ 10 V 5400 pF @ 50 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 22 ns 38 ns 1 +150 °C - - 6.25mm
Vishay SIR680DP-T1-RE3 N-channel MOSFET, 100 A, 80 V, 8-Pin SO Vishay N new products only 100 A 80 V 3.4 mΩ 3.4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 69.5 nC @ 10 V 5150 pF @ 40 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 28 ns 30 ns 1 +150 °C - 75s 6.25mm
Vishay SIR680DP-T1-RE3 N-channel MOSFET, 100 A, 80 V, 8-Pin SO Vishay N new products only 100 A 80 V 3.4 mΩ 3.4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 69.5 nC @ 10 V 5150 pF @ 40 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 28 ns 30 ns 1 +150 °C - - 6.25mm
Vishay SIR690DP-T1-RE3 N-channel MOSFET, 34.4 A, 200 V, 8-Pin SO Vishay N new products only 34.4 A 200 V 39 mΩ 4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 31.9 nC @ 10 V 1935 pF @ 100 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 13 ns 19 ns 1 +150 °C - 46s 6.25mm
Vishay SIR690DP-T1-RE3 N-channel MOSFET, 34.4 A, 200 V, 8-Pin SO Vishay N new products only 34.4 A 200 V 39 mΩ 4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 31.9 nC @ 10 V 1935 pF @ 100 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 13 ns 19 ns 1 +150 °C - - 6.25mm
Vishay SIR692DP-T1-RE3 N-channel MOSFET, 24.2 A, 250 V, 8-Pin SO Vishay N new products only 24.2 A 250 V 67 mΩ 4V 2V ±20 V SO Surface Mount Single 8 Enhancement Power MOSFET 104 W 25.3 nC @ 10 V 1405 pF @ 125 V 6.25 x 5.26 x 1.12mm -55 °C 5.26mm 1.1V 1.12mm - 13 ns 14 ns 1 +150 °C - 26s 6.25mm
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