Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
25 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0013 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
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Please check again later.
Stock information temporarily unavailable.
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 37 A, 25 V DirectFET ISOMETRIC Infineon IRF6715MTRPBF
4800
P.O.A.
Dual N-Channel MOSFET Transistor & Diode, 37 A, 25 V DirectFET ISOMETRIC Infineon IRF6715MTRPBF
Stock information temporarily unavailable.
4800
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
25 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0013 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2